[{"data":1,"prerenderedAt":76},["ShallowReactive",2],{"post-4345f5ecd69b488e505":3,"recom-4345f5ecd69b488e505":21},{"summary":4,"updateTime":5,"title":6,"cateName":7,"content":8,"cover":9,"createTime":10,"cateId":11,"isTop":12,"nickname":13,"siteId":14,"id":15,"isPage":12,"slug":16,"views":17,"status":18,"uid":15,"coverImageUrl":19,"createDate":20,"cate":11,"keywords":-1},"How To Choose Triode And FET Looking for capacitors online purchase? is a reliable marketplace to buy and learn about capacitors. Come with us for amazing deals & information.",1776841119725,"How To Choose Triode And FET","Tutorials","\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Triode is an electronic amplifying valve or vacuum tube consisting of three electrodes inside an evacuated glass envelope i.e. cathode filament, control grid and an anode. It is used as an amplifier for both audio and radio signals, as an oscillator, and in electronic circuits.\u003C/span>\u003C/p>\r\n\u003Ctable>\r\n\u003Ctbody>\r\n\u003Ctr>\r\n\u003Ctd width=\"395\">\r\n\u003Cdiv id=\"attachment_4691\" style=\"width: 251px\" class=\"wp-caption alignnone\">\u003Cimg loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" aria-describedby=\"caption-attachment-4691\" decoding=\"async\" class=\"size-full wp-image-4691\" src=\"/uploads/2019/09/Figure-1-Triode-symbol.png\" alt=\"\" width=\"241\" height=\"185\" srcset=\"uploads/2019/09/Figure-1-Triode-symbol.png 241w, uploads/2019/09/Figure-1-Triode-symbol-150x115.png 150w\" sizes=\"(max-width: 241px) 100vw, 241px\" />\u003Cp id=\"caption-attachment-4691\" class=\"wp-caption-text\">\u003C/span> \u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Figure 1 Triode symbol\u003C/span>\u003C/p>\u003C/div>\r\n\u003C/td>\r\n\u003Ctd width=\"850\">\r\n\u003Cdiv id=\"attachment_4692\" style=\"width: 323px\" class=\"wp-caption alignnone\">\u003Cimg fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" aria-describedby=\"caption-attachment-4692\" fetchpriority=\"high\" decoding=\"async\" class=\" wp-image-4692\" src=\"/uploads/2019/09/Figure-2-Triode-amplifier-circuit-from-www.allaboutcircuits.com_-400x247.png\" alt=\"\" width=\"313\" height=\"193\" srcset=\"uploads/2019/09/Figure-2-Triode-amplifier-circuit-from-www.allaboutcircuits.com_-400x247.png 400w, uploads/2019/09/Figure-2-Triode-amplifier-circuit-from-www.allaboutcircuits.com_-250x154.png 250w, uploads/2019/09/Figure-2-Triode-amplifier-circuit-from-www.allaboutcircuits.com_-150x92.png 150w, uploads/2019/09/Figure-2-Triode-amplifier-circuit-from-www.allaboutcircuits.com_.png 545w\" sizes=\"(max-width: 313px) 100vw, 313px\" />\u003Cp id=\"caption-attachment-4692\" class=\"wp-caption-text\">\u003C/span> \u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Figure 2 Triode amplifier circuit\u003C/span>\u003C/p>\u003C/div>\r\n\u003C/td>\r\n\u003C/tr>\r\n\u003C/tbody>\r\n\u003C/table>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Field Effect Transistor (FET) is an electronic device and uses electric field to control flow of current. It has three terminals; Gate, Drain and Source. FET uses voltage applied to the input terminal called Gate to control current flow through it resulting to output current being proportional to the input voltage hence FET is a voltage operated device. It has high input impedance which is useful in many circuits.  Most common characteristic; high efficiency, instant operation, robust and cheap and can be used in most electronic circuit applications to replace their equivalent Bipolar Junction Transistors (BJTs). FET has low power consumption and dissipation hence suitable in integrated circuits such as CMOS range of digital logic chips.\u003C/span>\u003C/p>\r\n\u003Cdiv id=\"attachment_4693\" style=\"width: 624px\" class=\"wp-caption alignnone\">\u003Cimg loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" aria-describedby=\"caption-attachment-4693\" decoding=\"async\" class=\" wp-image-4693\" src=\"/uploads/2019/09/Figure-3-Typical-FET-from-electronics-tutorial.ws_.png\" alt=\"\" width=\"614\" height=\"449\" srcset=\"uploads/2019/09/Figure-3-Typical-FET-from-electronics-tutorial.ws_.png 268w, uploads/2019/09/Figure-3-Typical-FET-from-electronics-tutorial.ws_-250x183.png 250w, uploads/2019/09/Figure-3-Typical-FET-from-electronics-tutorial.ws_-150x110.png 150w\" sizes=\"(max-width: 614px) 100vw, 614px\" />\u003Cp id=\"caption-attachment-4693\" class=\"wp-caption-text\">\u003C/span> \u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Figure 3 Typical FET\u003C/span>\u003C/p>\u003C/div>\r\n\u003Cdiv id=\"attachment_4694\" style=\"width: 643px\" class=\"wp-caption alignnone\">\u003Cimg loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" aria-describedby=\"caption-attachment-4694\" loading=\"lazy\" decoding=\"async\" class=\" wp-image-4694\" src=\"/uploads/2019/09/Figure-4-Symbol-of-FET-and-typical-types-from-electronics-tutorial.ws_-400x288.png\" alt=\"\" width=\"633\" height=\"456\" srcset=\"uploads/2019/09/Figure-4-Symbol-of-FET-and-typical-types-from-electronics-tutorial.ws_-400x288.png 400w, uploads/2019/09/Figure-4-Symbol-of-FET-and-typical-types-from-electronics-tutorial.ws_-250x180.png 250w, uploads/2019/09/Figure-4-Symbol-of-FET-and-typical-types-from-electronics-tutorial.ws_-150x108.png 150w, uploads/2019/09/Figure-4-Symbol-of-FET-and-typical-types-from-electronics-tutorial.ws_.png 473w\" sizes=\"(max-width: 633px) 100vw, 633px\" />\u003Cp id=\"caption-attachment-4694\" class=\"wp-caption-text\">\u003C/span> \u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Figure 4 Symbol of FET and typical types\u003C/span>\u003C/p>\u003C/div>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">With the speed of upgrading electronic devices, the standards for the performance of electronic devices are getting higher and higher in the circuit design and development for some of the electronic devices, not only in the switching power supply circuit but also in the circuit of the portable electronic device. All of them will use better performance electronic components – field effect transistors. Therefore, the correct selection of field effect transistors is one of the most difficult problems that hardware engineers often encounter. It is also an extremely important part. The selection of field effect transistors is possible. With the speed and manufacturing cost of a whole integrated op-amp directly affected, picking the field effect transistor; you can start from the following properties.\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Cu>Properties to Consider when Choosing FET\u003C/u>\u003C/span>\u003C/p>\r\n\u003Col>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Cstrong>Channel type\u003C/strong>\u003C/span>\u003C/li>\r\n\u003C/ol>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The first step in selecting a good FET electronic component is to choose an N-channel or P-channel FET. In typical power usage, when a field effect transistor is grounded and the load is applied to the mains voltage, the field effect transistor forms a low side switch. In low-side switches, N-channel field-effect transistors should be used, which are derived from the voltage required to turn off or turn on the electronic components. When the FET is connected to the bus and the load is grounded, a high side switch is required. P-channel FETs are typically used in this topology, again for voltage drive considerations.\u003C/span>\u003C/p>\r\n\u003Col start=\"2\">\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Cstrong>Rated voltage\u003C/strong>\u003C/span>\u003C/li>\r\n\u003C/ol>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">This involves determining the required voltage rating or the highest voltage that the electronic component can carry. The higher rated voltage the higher the cost of the electronic components. According to practice, the rated voltage should be higher than the mains voltage or bus voltage. This provides sufficient protection so that the FET does not malfunction.\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">For the selection of field effect transistors, it is important to know the highest voltage that will be carried between the drain and the source, i.e. the maximum VDS. It is critical to understand that the highest voltage that a field effect transistor can carry will vary with temperature. We must detect the range of voltage variation over the entire operating temperature range. The rated voltage must have sufficient margin to cover this range of variation, so that the circuit will not be ineffective. Other safety factors to consider include voltage transients caused by switching electronics such as motors or transformers. The rated voltages for different uses are also different; in general, portable devices are 20V, field-programmable gate array (FPGA) power supplies are 20 to 30V and 85 to 220VAC and applications are 450 to 600V.\u003C/span>\u003C/p>\r\n\u003Col start=\"3\">\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Cstrong>Rated current\u003C/strong>\u003C/span>\u003C/li>\r\n\u003C/ol>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">This rated current should be the highest current that the load can carry under all conditions. Similar to the voltage case, the selected field effect transistor is guaranteed to withstand this current rating even when the system is causing spike currents. The two considered current conditions are the continuous mode and the pulse spike. In the continuous conduction mode, the field effect transistor is in a steady state, at each time the current continues through the electronic components. A pulse spike refers to a large amount of surge (or spike current) flowing through an electronic component. Once the highest current under these conditions is specified, simply select the electronic component that can carry the highest current.\u003C/span>\u003C/p>\r\n\u003Col start=\"4\">\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Cstrong>Conduction Power Loss\u003C/strong>\u003C/span>\u003C/li>\r\n\u003C/ol>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">In practical situations, field effect transistors are not necessarily ideal electronic components. This is called conduction loss due to the power consumption during the conduction process. A field effect transistor is like a variable resistor when it is “on”, which is confirmed by the RDS(ON) of the electronic component and varies significantly with temperature. The power loss of an electronic component can be estimated by \u003Cimg loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" decoding=\"async\" class=\"alignnone  wp-image-4698\" src=\"/uploads/2019/09/微信图片_20190930163249.png\" alt=\"\" width=\"109\" height=\"28\" /> because the on-resistance varies with temperature, and the power loss also varies with the ratio. The higher the voltage VGS applied to the field effect transistor, the smaller the RDS(ON); otherwise the higher the RDS(ON). Note that the RDS(ON) resistance will increase slightly with current. The various electrical parameter variations for RDS(ON) resistors are available in the manufacturer’s technical data sheet.\u003C/span>\u003C/p>\r\n\u003Col start=\"5\">\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Cstrong>System cooling of FET\u003C/strong>\u003C/span>\u003C/li>\r\n\u003C/ol>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Two different situations must be considered, namely the worst case and the specific situation. It is proposed to use the worst-case situation calculations, which provide a greater margin of safety and ensure that the system is not susceptible to failure. There are some measurement data that must be paid attention to in the material table of the field effect transistor; the junction temperature of the electronic component is equivalent to the product of the maximum ambient temperature reheating resistance and power dissipation.\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Cimg loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" decoding=\"async\" class=\"alignnone  wp-image-4697\" src=\"/uploads/2019/09/微信图片_20190930163217-400x59.png\" alt=\"\" width=\"525\" height=\"77\" srcset=\"uploads/2019/09/微信图片_20190930163217-400x59.png 400w, uploads/2019/09/微信图片_20190930163217-250x37.png 250w, uploads/2019/09/微信图片_20190930163217-150x22.png 150w, uploads/2019/09/微信图片_20190930163217.png 499w\" sizes=\"(max-width: 525px) 100vw, 525px\" />\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">According to this formula, the maximum power loss of the system can be solved, that is, equivalent to \u003Cimg loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" decoding=\"async\" class=\"alignnone  wp-image-4696\" src=\"/uploads/2019/09/微信图片_20190930163153.png\" alt=\"\" width=\"125\" height=\"28\" /> by definition. We are already estimating the RDS (ON) at different temperatures by the maximum current of the electronic components. In addition, the heat dissipation of the board and the FET should be done well.\u003C/span>\u003C/p>\r\n\u003Col start=\"6\">\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Cstrong>Robustness of the electronic components\u003C/strong>\u003C/span>\u003C/li>\r\n\u003C/ol>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Avalanche breakdown refers to the fact that the reverse voltage on the semiconductor device exceeds the highest value and generates a strong electric field to increase the current in the electronic component. An increase in the size of the wafer enhances the avalanche resistance and ultimately improves the robustness of the electronic components. Therefore, selecting a larger package can effectively avoid avalanche.\u003C/span>\u003C/p>\r\n\u003Col start=\"7\">\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Cstrong>Switching performance\u003C/strong>\u003C/span>\u003C/li>\r\n\u003C/ol>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">There are many parameters that affect the performance of the switch, but the most critical are the gate/drain, gate/source and drain/source capacitances. These capacitors create switching losses in the electronics because they are charged every time they are switched. The switching speed of the field effect transistor is thus reduced, and the efficiency of the electronic component is also lowered. In order to calculate the total loss of the electronic components during the switching process, the loss (Eon) during the opening process and the loss (Eoff) during the closing process are calculated. The total power of the field effect transistor switch can be expressed by the following equation:\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Cimg loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" decoding=\"async\" class=\"alignnone  wp-image-4695\" src=\"/uploads/2019/09/微信图片_20190930163129.png\" alt=\"\" width=\"298\" height=\"40\" srcset=\"uploads/2019/09/微信图片_20190930163129.png 261w, uploads/2019/09/微信图片_20190930163129-250x34.png 250w, uploads/2019/09/微信图片_20190930163129-150x20.png 150w\" sizes=\"(max-width: 298px) 100vw, 298px\" />\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\"> The gate charge (Qgd) has the greatest impact on switching performance.\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">It takes only three steps to select a FET:\u003C/span>\u003C/p>\r\n\u003Cul>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Select the appropriate channel type (N-channel or P-channel)\u003C/span>\u003C/li>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Determine the rated voltage and current of the FET. After selecting the rated current, calculate the conduction power loss.\u003C/span>\u003C/li>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">To determine thermal requirements, designers must consider both worst and true conditions in their design process. It is generally recommended to use the worst-case results calculation because this result provides a greater margin of safety and ensures that the system is not prone to fail.\u003C/span>\u003C/li>\r\n\u003C/ul>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Cu>Properties to Consider when Choosing Chrystal Triode\u003C/u>\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">It is necessary to understand the type and material of the transistor and NPN and PNP are commonly used. These two tubes operate with different polarity requirements, so the two transistors cannot be replaced with each other. The triode’s amount of material is tantalum and silicon. The biggest difference before them is that the voltage is different. In the amplifying circuit, if the same type of silicon tube is used instead of the required specific type of silicon tube, the replacement is generally possible, but necessary adjustments are made at the base bias voltage. Because their starting voltages are different, but whether the transistors of different materials can be interchanged in the pulse circuit and the switching circuit there must be proper analysis and specific parameter determination, and therefore must not be blindly replaced.\u003C/span>\u003C/p>\r\n\r\n\r\n\u003Cp>\u003C/p>\r\n\u003C/div>\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">\u003C/div>\r\n\t\t\t\t\t\t\r\n\t\t\t\t\t\t\t\t\t\t\t\t\t\r\n\t\t\t\t\t\t\u003C!-- clear for photos floats -->\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">","uploads/2019/09/Figure-1-Triode-symbol.png",1776793431000,"20db6653d7e85fded62",0,"Admin","2028706543895019522","4345f5ecd69b488e505","how-to-choose-triode-and-fet",70,1,"/uploads/2019/09/Figure-1-Triode-symbol.png","Apr 22, 2026",[22,32,41,49,59,68],{"id":23,"title":24,"summary":25,"content":26,"cover":27,"cateId":11,"tags":27,"views":28,"isTop":12,"status":18,"createBy":27,"createTime":29,"updateBy":27,"updateTime":30,"institutionId":27,"isPage":12,"images":27,"horizontalCover":27,"verticalCover":27,"slug":31,"siteId":14},"c047d1a580d380475ed","What are the development tools for supporting 2802x-based applications?","What are the development tools for supporting 2802x-based applications? Looking for capacitors online purchase? is a reliable marketplace to buy and learn about capacitors. Come with us for amazing deals & information.","\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva; font-size: 12pt;\">\u003Cspan style=\"color: #c70a0a;\">*\u003C/span> \u003Cspan style=\"color: #808080;\">Question\u003C/span>\u003C/span>\u003C/p>\r\n\u003Ctable>\r\n\u003Ctbody>\r\n\u003Ctr>\r\n\u003Ctd width=\"1136\">What are the development tools for supporting 2802x-based applications?\u003C/td>\r\n\u003C/tr>\r\n\u003C/tbody>\r\n\u003C/table>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Cspan style=\"color: #c70a0a;\">\u003Cbr />\r\n\u003Cspan style=\"font-size: 12pt;\">*\u003C/span>\u003C/span>\u003Cspan style=\"color: #808080; font-size: 12pt;\"> Answer\u003C/span>\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-size: inherit;\">● CodeComposerStudi0 integrated development environment IDE – c / c compiler A code generation tool An assembler / linker One cycle accurate simulator \u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-size: inherit;\">● Application algorithm · \u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-size: inherit;\">\u003C/span>\u003C/p>\r\n\u003C/div>\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">\u003C/div>\r\n\t\t\t\t\t\t\r\n\t\t\t\t\t\t\t\t\t\t\t\t\t\r\n\t\t\t\t\t\t\u003C!-- clear for photos floats -->\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">",null,238,"2026-04-22 01:44:14","2026-04-22 14:58:27","what-are-the-development-tools-for-supporting-2802x-based-applications",{"id":33,"title":34,"summary":35,"content":36,"cover":27,"cateId":11,"tags":37,"views":38,"isTop":12,"status":18,"createBy":27,"createTime":39,"updateBy":27,"updateTime":30,"institutionId":27,"isPage":12,"images":27,"horizontalCover":27,"verticalCover":27,"slug":40,"siteId":14},"6d16643f4061eb43174","What is the thermocouple sensor made of?","What is the thermocouple sensor made of? Looking for capacitors online purchase? is a reliable marketplace to buy and learn about capacitors. Come with us for amazing deals & information.","\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva; font-size: 12pt;\">\u003Cspan style=\"color: #c70a0a;\">*\u003C/span> \u003Cspan style=\"color: #808080;\">Question\u003C/span>\u003C/span>\u003C/p>\r\n\u003Ctable>\r\n\u003Ctbody>\r\n\u003Ctr>\r\n\u003Ctd width=\"1136\">\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">What is the thermocouple sensor made of?\u003C/span>\u003C/td>\r\n\u003C/tr>\r\n\u003C/tbody>\r\n\u003C/table>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Cspan style=\"color: #c70a0a;\">\u003Cbr />\r\n\u003Cspan style=\"font-size: 12pt;\">*\u003C/span>\u003C/span>\u003Cspan style=\"color: #808080; font-size: 12pt;\"> Answer\u003C/span>\u003C/span>\u003C/p>\r\n\u003Ctable>\r\n\u003Ctbody>\r\n\u003Ctr>\r\n\u003Ctd width=\"1136\">\u003Cspan style=\"font-family: trebuchet-ms;\">A thermocouple sensor is a thermal sensor that uses thermoelectric phenomena.\u003C/span>\u003C/td>\r\n\u003C/tr>\r\n\u003C/tbody>\r\n\u003C/table>\r\n\u003Cp>\u003Cspan style=\"font-size: inherit;\">\u003Cbr />\r\n\u003C/span>\u003C/p>","sensor",229,"2026-04-22 01:43:58","what-is-the-thermocouple-sensor-made-of",{"id":42,"title":43,"summary":44,"content":45,"cover":27,"cateId":11,"tags":46,"views":47,"isTop":12,"status":18,"createBy":27,"createTime":39,"updateBy":27,"updateTime":30,"institutionId":27,"isPage":12,"images":27,"horizontalCover":27,"verticalCover":27,"slug":48,"siteId":14},"61750966158705a45ac","What is the goal of software design for terminal nodes?","What is the goal of software design for terminal nodes? Looking for capacitors online purchase? is a reliable marketplace to buy and learn about capacitors. Come with us for amazing deals & information.","\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva; font-size: 12pt;\">\u003Cspan style=\"color: #c70a0a;\">*\u003C/span> \u003Cspan style=\"color: #808080;\">Question\u003C/span>\u003C/span>\u003C/p>\r\n\u003Ctable>\r\n\u003Ctbody>\r\n\u003Ctr>\r\n\u003Ctd width=\"1136\">What is the goal of software design for terminal nodes?\u003C/td>\r\n\u003C/tr>\r\n\u003C/tbody>\r\n\u003C/table>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Cspan style=\"color: #c70a0a;\">\u003Cbr />\r\n\u003Cspan style=\"font-size: 12pt;\">*\u003C/span>\u003C/span>\u003Cspan style=\"color: #808080; font-size: 12pt;\"> Answer\u003C/span>\u003C/span>\u003C/p>\r\n\u003Ctable>\r\n\u003Ctbody>\r\n\u003Ctr>\r\n\u003Ctd width=\"1136\">Data acquisition of analog input and digital input through C language, that is, collecting parameters from electrical equipment in power grid and substation, and classifying data to master the operation status of the substation and the status of electrical equipment in the station;The command, the jump switch, to achieve the purpose of monitoring and control.\u003C/td>\r\n\u003C/tr>\r\n\u003C/tbody>\r\n\u003C/table>\r\n\u003Cp>\u003Cspan style=\"font-size: inherit;\">\u003Cbr />\r\n\u003C/span>\u003C/p>\r\n\u003C/div>\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">\u003C/div>\r\n\t\t\t\t\t\t\r\n\t\t\t\t\t\t\t\t\t\t\t\t\t\r\n\t\t\t\t\t\t\u003C!-- clear for photos floats -->\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">","design,terminal",224,"what-is-the-goal-of-software-design-for-terminal-nodes",{"id":50,"title":51,"summary":52,"content":53,"cover":54,"cateId":11,"tags":27,"views":55,"isTop":12,"status":18,"createBy":27,"createTime":56,"updateBy":27,"updateTime":57,"institutionId":27,"isPage":12,"images":27,"horizontalCover":27,"verticalCover":27,"slug":58,"siteId":14},"a39a5d8553e41a5005a","Template Analysis Method For EMC Problems","Template Analysis Method For EMC Problems Looking for capacitors online purchase? is a reliable marketplace to buy and learn about capacitors. Come with us for amazing deals & information.","\u003Ctable>\r\n\u003Ctbody>\r\n\u003Ctr>\r\n\u003Ctd width=\"198\">\r\n\u003Cp>\u003Cdiv id=\"attachment_5001\" style=\"width: 265px\" class=\"wp-caption alignnone\">\u003Cimg loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" aria-describedby=\"caption-attachment-5001\" decoding=\"async\" class=\" wp-image-5001\" src=\"uploads/2019/10/Forms-of-electromagnetic-interference-400x224.jpg\" alt=\"\" width=\"255\" height=\"143\" srcset=\"uploads/2019/10/Forms-of-electromagnetic-interference-400x224.jpg 400w, uploads/2019/10/Forms-of-electromagnetic-interference-250x140.jpg 250w, uploads/2019/10/Forms-of-electromagnetic-interference-150x84.jpg 150w, uploads/2019/10/Forms-of-electromagnetic-interference.jpg 640w\" sizes=\"(max-width: 255px) 100vw, 255px\" />\u003Cp id=\"caption-attachment-5001\" class=\"wp-caption-text\">\u003C/span> \u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The form of electromagnetic interference\u003C/span>\u003C/p>\u003C/div>\u003C/td>\r\n\u003Ctd width=\"425\">\r\n\u003Cp>\u003Cdiv id=\"attachment_5004\" style=\"width: 376px\" class=\"wp-caption alignnone\">\u003Cimg fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" aria-describedby=\"caption-attachment-5004\" fetchpriority=\"high\" decoding=\"async\" class=\" wp-image-5004\" src=\"uploads/2019/10/The-main-form-of-electromagnetic-interference-400x182.jpg\" alt=\"\" width=\"366\" height=\"166\" srcset=\"uploads/2019/10/The-main-form-of-electromagnetic-interference-400x182.jpg 400w, uploads/2019/10/The-main-form-of-electromagnetic-interference-250x114.jpg 250w, uploads/2019/10/The-main-form-of-electromagnetic-interference-150x68.jpg 150w, uploads/2019/10/The-main-form-of-electromagnetic-interference.jpg 562w\" sizes=\"(max-width: 366px) 100vw, 366px\" />\u003Cp id=\"caption-attachment-5004\" class=\"wp-caption-text\">\u003C/span> \u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The main form of electromagnetic interference\u003C/span>\u003C/p>\u003C/div>\u003C/td>\r\n\u003C/tr>\r\n\u003C/tbody>\r\n\u003C/table>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The electromagnetic interference problem is a key issue in any hardware design field. It is especially important to understand the initial dry electromagnetic interference problem to solve this problem.\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Cstrong>The electromagnetic interference model has three basic elements:\u003C/strong>\u003C/span>\u003C/p>\r\n\u003Col>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">There is electromagnetic interference energy.\u003C/span>\u003C/li>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">There is a device that is subject to electromagnetic interference.\u003C/span>\u003C/li>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">There is a coupling channel to transmit electromagnetic energy between the interfered and interfered devices.\u003C/span>\u003C/li>\r\n\u003C/ol>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Electromagnetic interference only occurs when these three basic elements are met at the same time. EMC engineers should determine the EMC design content and design direction based on the physical structure.\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The EMC analysis template is determined by the electrical length of the structure. Converting the physical dimensions of the device structure to electrical length is the starting point for design and problem finding. The combination and connection of templates constitute a model for analyzing electromagnetic compatibility problems. The template analysis method is to select the appropriate template and electromagnetic logic connection according to the actual problem and structure to form a dynamic process of complete electromagnetic interference phenomenon.\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The EMC design of printed circuit boards is the cheapest and most effective way to eliminate the main sources of RF interference. When the interference source on the printed circuit board and the victim device exist in the same small space, the engineer must control the electromagnetic energy generated. This means that electromagnetic energy is only present at the required assembly parts. This is the method of removing EMC problems, electromagnetic suppression or electromagnetic cancellation.\u003C/span>\u003C/p>\r\n\u003C/div>\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">\u003C/div>\r\n\t\t\t\t\t\t\r\n\t\t\t\t\t\t\t\t\t\t\t\t\t\r\n\t\t\t\t\t\t\u003C!-- clear for photos floats -->\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">","uploads/2019/10/Forms-of-electromagnetic-interference-400x224.jpg",498,"2026-04-22 01:43:54","2026-04-22 14:58:28","template-analysis-method-for-emc-problems",{"id":60,"title":61,"summary":62,"content":63,"cover":64,"cateId":11,"tags":27,"views":65,"isTop":12,"status":18,"createBy":27,"createTime":66,"updateBy":27,"updateTime":57,"institutionId":27,"isPage":12,"images":27,"horizontalCover":27,"verticalCover":27,"slug":67,"siteId":14},"86325bcdfe62f25cc0b","Judgment Method of Three Types of Amplifiers","Judgment Method of Three Types of Amplifiers Looking for capacitors online purchase? is a reliable marketplace to buy and learn about capacitors. Come with us for amazing deals & information.","\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Triode based audio and electronic amplifiers are very commonly found in many walks of life. Although, the transistor based amplifiers created the danger of obsolescence of tube amplifiers, the tube amplifiers have succeeded in maintaining a cult following amongst the audiophiles. The main reason behind this is the warm and crunchy sound response of tube amplifiers.\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The main component in tube amplifiers is the triode. Triode is essentially an amplifying vacuum tube which consists of three electrodes inside a glass casing. The electrodes are known as anode, cathode, and grid respectively. Triodes were widely used in all types of electronic circuits until they got replaced by transistors. [\u003Ca href=\"#Lee19\">1\u003C/a>]\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">According to the electronic circuit configuration, there are three main types of amplifiers. These types include common emitter, common collector, and common base amplifiers. Following sub-sections provide an ample discussion on these amplifier types.\u003C/span>\u003C/p>\r\n\u003Cdiv id=\"ez-toc-container\" class=\"ez-toc-v2_0_69_1 counter-hierarchy ez-toc-counter ez-toc-grey ez-toc-container-direction\">\r\n\u003Cdiv class=\"ez-toc-title-container\">\r\n\u003Cp class=\"ez-toc-title \" >Table of Contents\u003C/p>\r\n\u003Cspan class=\"ez-toc-title-toggle\">\u003Ca href=\"#\" class=\"ez-toc-pull-right ez-toc-btn ez-toc-btn-xs ez-toc-btn-default ez-toc-toggle\" aria-label=\"Toggle Table of Content\">\u003Cspan class=\"ez-toc-js-icon-con\">\u003Cspan class=\"\">\u003Cspan class=\"eztoc-hide\" style=\"display:none;\">Toggle\u003C/span>\u003Cspan class=\"ez-toc-icon-toggle-span\">\u003Csvg style=\"fill: #999;color:#999\" xmlns=\"http://www.w3.org/2000/svg\" class=\"list-377408\" width=\"20px\" height=\"20px\" viewBox=\"0 0 24 24\" fill=\"none\">\u003Cpath d=\"M6 6H4v2h2V6zm14 0H8v2h12V6zM4 11h2v2H4v-2zm16 0H8v2h12v-2zM4 16h2v2H4v-2zm16 0H8v2h12v-2z\" fill=\"currentColor\">\u003C/path>\u003C/svg>\u003Csvg style=\"fill: #999;color:#999\" class=\"arrow-unsorted-368013\" xmlns=\"http://www.w3.org/2000/svg\" width=\"10px\" height=\"10px\" viewBox=\"0 0 24 24\" version=\"1.2\" baseProfile=\"tiny\">\u003Cpath d=\"M18.2 9.3l-6.2-6.3-6.2 6.3c-.2.2-.3.4-.3.7s.1.5.3.7c.2.2.4.3.7.3h11c.3 0 .5-.1.7-.3.2-.2.3-.5.3-.7s-.1-.5-.3-.7zM5.8 14.7l6.2 6.3 6.2-6.3c.2-.2.3-.5.3-.7s-.1-.5-.3-.7c-.2-.2-.4-.3-.7-.3h-11c-.3 0-.5.1-.7.3-.2.2-.3.5-.3.7s.1.5.3.7z\"/>\u003C/svg>\u003C/span>\u003C/span>\u003C/span>\u003C/a>\u003C/span>\u003C/div>\r\n\u003Cnav>\u003Cul class='ez-toc-list ez-toc-list-level-1 ' >\u003Cli class='ez-toc-page-1 ez-toc-heading-level-1'>\u003Ca class=\"ez-toc-link ez-toc-heading-1\" href=\"#Common_Emitter_Amplifier\" title=\"Common Emitter Amplifier\">Common Emitter Amplifier\u003C/a>\u003C/li>\u003Cli class='ez-toc-page-1 ez-toc-heading-level-1'>\u003Ca class=\"ez-toc-link ez-toc-heading-2\" href=\"#Common_Collector_Amplifier\" title=\"Common Collector Amplifier\">Common Collector Amplifier\u003C/a>\u003C/li>\u003Cli class='ez-toc-page-1 ez-toc-heading-level-1'>\u003Ca class=\"ez-toc-link ez-toc-heading-3\" href=\"#Common_Base_Amplifier\" title=\"Common Base Amplifier\">Common Base Amplifier\u003C/a>\u003C/li>\u003Cli class='ez-toc-page-1 ez-toc-heading-level-1'>\u003Ca class=\"ez-toc-link ez-toc-heading-4\" href=\"#Works_Cited\" title=\"Works Cited\">Works Cited\u003C/a>\u003C/li>\u003C/ul>\u003C/nav>\u003C/div>\r\n\u003Ch1>\u003Cspan class=\"ez-toc-section\" id=\"Common_Emitter_Amplifier\">\u003C/span>\u003Cspan style=\"font-size: 14pt; font-family: 'Trebuchet MS', Geneva;\">Common Emitter Amplifier\u003C/span>\u003Cspan class=\"ez-toc-section-end\">\u003C/span>\u003C/h1>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Common emitter amplifiers are the most widely used type of amplifiers. Common emitter amplifiers can be identified easily by the grounded emitter terminal. Like all other amplifiers, the CE amplifier also operates on an AC input. The common emitter amplifier is a single-stage amplifier which uses a BJT transistor or a triode as an amplifying element. The circuit of common emitter amplifier is given as following:\u003C/span>\u003C/p>\r\n\u003Cdiv id=\"attachment_4685\" style=\"width: 670px\" class=\"wp-caption alignnone\">\u003Cimg fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" aria-describedby=\"caption-attachment-4685\" fetchpriority=\"high\" decoding=\"async\" class=\" wp-image-4685\" src=\"uploads/2019/09/Figure-1-Common-Emitter-Amplifier-Circuit.jpg\" alt=\"\" width=\"660\" height=\"512\" srcset=\"uploads/2019/09/Figure-1-Common-Emitter-Amplifier-Circuit.jpg 387w, uploads/2019/09/Figure-1-Common-Emitter-Amplifier-Circuit-250x194.jpg 250w, uploads/2019/09/Figure-1-Common-Emitter-Amplifier-Circuit-150x116.jpg 150w\" sizes=\"(max-width: 660px) 100vw, 660px\" />\u003Cp id=\"caption-attachment-4685\" class=\"wp-caption-text\">\u003C/span> \u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Figure 1: Common Emitter Amplifier Circuit\u003C/span>\u003C/p>\u003C/div>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Ca href=\"https://www.elprocus.com/common-emitter-amplifier-circuit-working/\">https://www.elprocus.com/common-emitter-amplifier-circuit-working/\u003C/a>\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The resistors R1 and R2 form a voltage divider circuit which is used for biasing the transistor. The resistor R\u003Csub>E \u003C/sub>provides thermal stability to the amplifier. A coupling capacitor is present on the input side of the transistor which filters out DC component from the signal. [\u003Ca href=\"#Tar19\">2\u003C/a>]\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Major advantages of common emitter amplifier include low input impedance, high output impedance, high power gain, low noise, and high current gain. Main disadvantages of common emitter amplifier include unsuitability for high frequencies, unstable voltage gain, high thermal instability, and high output resistance. The CE amplifiers find their applications in low frequency voltage amplifiers, RF circuits, and low noise amplifiers. [\u003Ca href=\"#Tar19\">2\u003C/a>]\u003C/span>\u003C/p>\r\n\u003Ch1>\u003Cspan class=\"ez-toc-section\" id=\"Common_Collector_Amplifier\">\u003C/span>\u003Cspan style=\"font-size: 14pt; font-family: 'Trebuchet MS', Geneva;\">Common Collector Amplifier\u003C/span>\u003Cspan class=\"ez-toc-section-end\">\u003C/span>\u003C/h1>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The common collector amplifier can be identified from the grounded collector terminal of the triode or the transistor. The common collector amplifiers are mostly used as buffers in multi-stage amplifier circuits. The CC amplifier circuit is given as following:\u003C/span>\u003C/p>\r\n\u003Cdiv id=\"attachment_4686\" style=\"width: 633px\" class=\"wp-caption alignnone\">\u003Cimg loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" aria-describedby=\"caption-attachment-4686\" decoding=\"async\" class=\" wp-image-4686\" src=\"uploads/2019/09/Figure-2-Common-Collector-Amplifier-or-Emitter-Follower-Circuit.jpg\" alt=\"\" width=\"623\" height=\"509\" srcset=\"uploads/2019/09/Figure-2-Common-Collector-Amplifier-or-Emitter-Follower-Circuit.jpg 329w, uploads/2019/09/Figure-2-Common-Collector-Amplifier-or-Emitter-Follower-Circuit-250x204.jpg 250w, uploads/2019/09/Figure-2-Common-Collector-Amplifier-or-Emitter-Follower-Circuit-150x123.jpg 150w\" sizes=\"(max-width: 623px) 100vw, 623px\" />\u003Cp id=\"caption-attachment-4686\" class=\"wp-caption-text\">\u003C/span> \u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Figure 2 Common Collector Amplifier or Emitter Follower Circuit\u003C/span>\u003C/p>\u003C/div>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\"> \u003Ca href=\"https://www.elprocus.com/common-collector-amplifier-circuit-working/\">https://www.elprocus.com/common-collector-amplifier-circuit-working/\u003C/a>\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The input signal is introduced via the base of the triode whereas the output is taken from the emitter terminal. The main advantages of CC amplifier include high current gain, high input resistance, and low output resistance. The disadvantages of CC amplifier include low voltage gain. The CC amplifiers find their applications as impedance matching amplifiers, isolation amplifiers, and buffer amplifiers in cascade or multi-stage amplifier systems. [\u003Ca href=\"#Dav19\">3\u003C/a>]\u003C/span>\u003C/p>\r\n\u003Ch1>\u003Cspan class=\"ez-toc-section\" id=\"Common_Base_Amplifier\">\u003C/span>\u003Cspan style=\"font-size: 14pt; font-family: 'Trebuchet MS', Geneva;\">Common Base Amplifier\u003C/span>\u003Cspan class=\"ez-toc-section-end\">\u003C/span>\u003C/h1>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The common base amplifier configuration is not as widely used as the CE and CC amplifiers. They are mostly used in high frequency circuits. In a common base amplifier the base terminal of the triode is connected to the ground, the input signal is applied to the emitter, and the output is taken from the collector terminal. The circuit diagram of the CB amplifier is given as following:\u003C/span>\u003C/p>\r\n\u003Cdiv id=\"attachment_4687\" style=\"width: 688px\" class=\"wp-caption alignnone\">\u003Cimg loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" aria-describedby=\"caption-attachment-4687\" decoding=\"async\" class=\" wp-image-4687\" src=\"uploads/2019/09/Figure-3-Common-Base-Amplifier-using-an-NPN-Transistor.png\" alt=\"\" width=\"678\" height=\"835\" srcset=\"uploads/2019/09/Figure-3-Common-Base-Amplifier-using-an-NPN-Transistor.png 194w, uploads/2019/09/Figure-3-Common-Base-Amplifier-using-an-NPN-Transistor-150x185.png 150w\" sizes=\"(max-width: 678px) 100vw, 678px\" />\u003Cp id=\"caption-attachment-4687\" class=\"wp-caption-text\">\u003C/span> \u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Figure 3 Common Base Amplifier using an NPN Transistor\u003C/span>\u003C/p>\u003C/div>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Ca href=\"https://www.electronics-tutorials.ws/amplifier/common-base-amplifier.html\">https://www.electronics-tutorials.ws/amplifier/common-base-amplifier.html\u003C/a>\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The CB amplifiers are used in high frequency circuits where low input impedance is required. They are used in applications such as moving coil microphone pre-amplifiers, UHF, VHF, and RF amplifiers. The advantages of CB amplifier include decent voltage gain and current buffering capability. The disadvantages include need for dual power supply, low input impedance, low current gain, and high output impedance. [\u003Ca href=\"#www19\">4\u003C/a>]\u003C/span>\u003C/p>\r\n\u003Ch1>\u003Cspan class=\"ez-toc-section\" id=\"Works_Cited\">\u003C/span>\u003Cspan style=\"font-size: 14pt; font-family: 'Trebuchet MS', Geneva;\">Works Cited\u003C/span>\u003Cspan class=\"ez-toc-section-end\">\u003C/span>\u003C/h1>\r\n\u003Ctable width=\"630\">\r\n\u003Ctbody>\r\n\u003Ctr>\r\n\u003Ctd width=\"18\">\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">[1]\u003C/span>\u003C/td>\r\n\u003Ctd width=\"606\">\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Lee Forest. (2019, August) www.allaboutcircuits.com. [Online]. \u003Ca href=\"https://www.allaboutcircuits.com/textbook/semiconductors/chpt-13/the-triode/\">https://www.allaboutcircuits.com/textbook/semiconductors/chpt-13/the-triode/\u003C/a>\u003C/span>\u003C/td>\r\n\u003C/tr>\r\n\u003Ctr>\r\n\u003Ctd width=\"18\">\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">[2]\u003C/span>\u003C/td>\r\n\u003Ctd width=\"606\">\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Tarun Agarwal. (2019, June) www.elprocus.com. [Online]. \u003Ca href=\"https://www.elprocus.com/common-emitter-amplifier-circuit-working/\">https://www.elprocus.com/common-emitter-amplifier-circuit-working/\u003C/a>\u003C/span>\u003C/td>\r\n\u003C/tr>\r\n\u003Ctr>\r\n\u003Ctd width=\"18\">\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">[3]\u003C/span>\u003C/td>\r\n\u003Ctd width=\"606\">\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Dave Moldenhauer. (2019, March) www.watelectrical.com. [Online]. \u003Ca href=\"https://www.watelectrical.com/working-and-applications-of-common-collector-amplifier/\">https://www.watelectrical.com/working-and-applications-of-common-collector-amplifier/\u003C/a>\u003C/span>\u003C/td>\r\n\u003C/tr>\r\n\u003Ctr>\r\n\u003Ctd width=\"18\">\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">[4]\u003C/span>\u003C/td>\r\n\u003Ctd width=\"606\">\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">(2019, August) www.electronics-notes.com. [Online]. \u003Ca href=\"https://www.electronics-notes.com/articles/analogue_circuits/transistor/transistor-common-base-circuit.php\">https://www.electronics-notes.com/articles/analogue_circuits/transistor/transistor-common-base-circuit.php\u003C/a>\u003C/span>\u003C/td>\r\n\u003C/tr>\r\n\u003C/tbody>\r\n\u003C/table>\r\n\u003C/div>\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">\u003C/div>\r\n\t\t\t\t\t\t\r\n\t\t\t\t\t\t\t\t\t\t\t\t\t\r\n\t\t\t\t\t\t\u003C!-- clear for photos floats -->\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">","uploads/2019/09/Figure-1-Common-Emitter-Amplifier-Circuit.jpg",56,"2026-04-22 01:43:51","judgment-method-of-three-types-of-amplifiers",{"id":69,"title":70,"summary":71,"content":72,"cover":73,"cateId":11,"tags":27,"views":74,"isTop":12,"status":18,"createBy":27,"createTime":66,"updateBy":27,"updateTime":30,"institutionId":27,"isPage":12,"images":27,"horizontalCover":27,"verticalCover":27,"slug":75,"siteId":14},"4e90914c43b2a6a4366","Precautions for using MOS (Metal-Oxide-Silicon transistor) tubes","Precautions for using MOS (Metal-Oxide-Silicon transistor) tubes Looking for capacitors online purchase? is a reliable marketplace to buy and learn about capacitors. Come with us for amazing deals & information.","\u003Cdiv id=\"attachment_4675\" style=\"width: 388px\" class=\"wp-caption alignnone\">\u003Cimg fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" aria-describedby=\"caption-attachment-4675\" fetchpriority=\"high\" decoding=\"async\" class=\" wp-image-4675\" src=\"uploads/2019/09/MOS-tube.jpg\" alt=\"\" width=\"378\" height=\"378\" srcset=\"uploads/2019/09/MOS-tube.jpg 225w, uploads/2019/09/MOS-tube-150x150.jpg 150w, uploads/2019/09/MOS-tube-24x24.jpg 24w, uploads/2019/09/MOS-tube-48x48.jpg 48w, uploads/2019/09/MOS-tube-96x96.jpg 96w\" sizes=\"(max-width: 378px) 100vw, 378px\" />\u003Cp id=\"caption-attachment-4675\" class=\"wp-caption-text\">\u003C/span> \u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">MOS tube\u003C/span>\u003C/p>\u003C/div>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">A MOS transistor (also known as metal-oxide semiconductor field effect transistor) is electrically conductive by a majority of carriers’ and it is a voltage controlled electrical device. It is also called a unipolar transistor. It has three main terminals; Gate (G), Drain (D) and Source (S). The Gate voltage determines the conductivity of the device and with change of applied voltage; the MOS transistor can be used for amplifying or switching electronic signals. Its characteristics are; high input resistance (10^7~10^12Ω), low noise, low power consumption, large dynamic range, easy integration, no secondary breakdown, wide safe working area, source and drain can be interchanged, it is voltage controlled device and conduction takes place through majority carriers (n-channel: electrons and p-channel: holes).\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">All MOS integrated circuits (including P-channel MOS, N-channel MOS, complementary MOS-CMOS integrated circuits) have an insulated gate to prevent voltage breakdown. Generally, the thickness of insulating Gate oxide layer of MOS transistor is 5 – 200 nm (about 25 nm, 50 nm, and 80 nm). In addition to the high-impedance gate of the integrated circuit, there is a resistor-diode network for protection. However, MOS devices are sensitive to voltage spikes and static electricity discharges and this can cause difficulties when we have to replace MOS devices especially complementary-symmetry metal-oxide semiconductor (CMOS) devices. Therefore, the protection network inside the device is not enough to avoid electrostatic damage (ESD) to the device. To minimize chances of damaging MOS devices during handling, special procedures have been developed to protect them from static shock. ICs are generally shipped and stored in special conductive-plastic tubes or trays. MOS devices safety is ensured by inserting ICs leas into aluminium foil or antistatic (conductive) foam – not Styrofoam. PC boards containing static sensitive devices are normally shipped in special antistatic bags, which are good for storing ICs and other computer components that could be damaged by ESD.\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Experiments indicate that MOS device will fail during high-voltage discharge. The device may also fail for accumulation of multiple lower voltage discharges. According to the severity of the damage, there are many forms of electrostatic damage. The most serious and most likely to occur is the complete destruction of the input or output so as to be short-circuited or open to the power supply terminal VDD, and MOS device completely loses its original function. A little bit of serious damage is intermittent failure or degradation of performance, which is even more difficult to detect. There is also some electrostatic damage that can cause the device performance to deteriorate due to increased leakage current.\u003C/span>\u003C/p>\r\n\u003Ch1>\u003Cspan style=\"font-size: 14pt; font-family: 'Trebuchet MS', Geneva;\">\u003Cstrong>MOS tube definition\u003C/strong>\u003C/span>\u003C/h1>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">MOS tube is a MOS transistor or a metal-insulator-semiconductor. The source (S) and drain (D) of MOS tube can be reversed. They are all N-type regions formed in the P-type backgate. And in most cases, the two zones are same even if two ends are reversed. And it will not affect performance of the device. Such devices are considered to be symmetrical. MOS tube is a voltage-driven high-current type device, which is widely used in circuits, especially power systems. MOS tubes have some characteristics that should be paid special attention in practical applications.\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">MOS devices have body diodes formed by pn junction between source (S) and drain (D), and also known as parasitic diodes or an internal diode, are found in a single MOS device between the drain and the source. They are not used in integrated circuit lithography (standard method of printed circuit board (PCB), and microprocessor fabrication). This diode can provide reverse protection and freewheeling during high current drive and inductive loads. The forward voltage drop is about 0.7~1V. Because of this diode, the MOS device can’t simply see the function of a switch in the circuit. For example, in the charging circuit, after the charging is completed, the battery will reverse when the supply power is removed; this is usually the result we do not want to see. The general solution is to add a diode to prevent reverse power supply. This can be done, but the characteristics of the diode must have a forward voltage of 0.6~1V. Down, in the case of high currents, the heat is severe, and at the same time, the energy is wasted, and the energy efficiency of the whole machine is low. Another method is to add a back-to-back MOS tube and use the low on-resistance of the MOS tube to achieve energy saving. Another common application of this characteristic is low-voltage synchronous rectification. In practice, the body diode is a result of manufacturing process, and it is in between the source and drain and on an n-channel device, if the drains fall below voltage on the source, current will flow from source to drain.\u003C/span>\u003C/p>\r\n\u003Ch1>\u003Cspan style=\"font-size: 14pt; font-family: 'Trebuchet MS', Geneva;\">\u003Cstrong>Precautions\u003C/strong>\u003C/span>\u003C/h1>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">After the MOS tube is turned on, it has no directionality and in this state of operation, it behaves like a wire. It has a resistance characteristic only and there is no conduction voltage drop in this case. Usually, the saturation level on resistance is several to several tens of milliohms (mΩ). MOS tube is also non-directional therefore allowing both DC and AC currents to pass through.\u003C/span>\u003C/p>\r\n\u003Ch1>\u003Cspan style=\"font-size: 14pt; font-family: 'Trebuchet MS', Geneva;\">\u003Cstrong>Precautions for using MOS tubes\u003C/strong>\u003C/span>\u003C/h1>\r\n\u003Cul>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">In order to safely use the MOS tube, the limit value of the dissipated power of the tube, the maximum drain-source voltage, the maximum gate-source voltage, and the maximum current set values cannot be exceeded in the manufacturing design.\u003C/span>\u003C/li>\r\n\u003C/ul>\r\n\u003Cul>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">When using various types of MOS tubes, they must be connected to the circuit in strict accordance with the required bias, and the polarity of the MOS tube bias should be observed. For example, the junction between the source and drain of the junction MOS transistor is a PN junction, the gate of the N-channel transistor can be positively biased; the gate of the P-channel transistor can be negatively biased.\u003C/span>\u003C/li>\r\n\u003C/ul>\r\n\u003Cul>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Since the input impedance of the MOS tube is extremely high, the lead pin must be short-circuited during transportation and storage, and the metal shield package should be used to prevent the external induced potential from penetrating the gate. In particular, it is important to note that the MOS tube cannot be placed in a plastic box. It should be placed in a metal box e.g aluminium foil when it is stored, and the tube should be protected from moisture.\u003C/span>\u003C/li>\r\n\u003C/ul>\r\n\u003Cul>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">In order to prevent the gate breakdown of the MOS tube, all test instruments, worktables, soldering irons, and the circuit itself must be well grounded; when the pins are soldered, the source is soldered first; before being connected to the circuit, All the lead ends of MOS tube are kept short-circuited with each other, and the short-circuit material is removed after soldering; when removing MOS tube from the component holder, the grounding of the human body should be adhered to. The advanced gas-fired electric soldering iron is convenient for soldering MOS tubes and ensures safety. When the power is not turned off, it is absolutely impossible to insert or remove the tubes from the circuit. The above safety measures must be taken care of when using MOS tubes.\u003C/span>\u003C/li>\r\n\u003C/ul>\r\n\u003Cul>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">When installing the MOS tube, pay attention to the location of the installation to avoid heating elements; to prevent the vibration of MOS tube, it is necessary to fasten MOS tube; when the lead is bent, it should be larger than the root size of 5 mm. Therefore it is important to prevent bending of the pins and causing air leaks.\u003C/span>\u003C/li>\r\n\u003C/ul>\r\n\u003Cul>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">When using a VMOS tube, a suitable heat sink must be added. Taking VNF306 as an example, the maximum power can reach 30W after it is equipped with a 140×140×4 (mm) heat sink.\u003C/span>\u003C/li>\r\n\u003C/ul>\r\n\u003Cul>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">After the multiple MOS tubes are connected in parallel, the high-frequency characteristics of the amplifier are deteriorated due to the corresponding increase in the inter-electrode capacitance and the distributed capacitance and high-frequency parasitic oscillation of the amplifier is easily caused by the feedback. For this reason, the parallel composite MOS tubes generally do not exceed four, and the anti-parasitic oscillation resistors are connected in series to the base or the gate of each tube.\u003C/span>\u003C/li>\r\n\u003C/ul>\r\n\u003Cul>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The gate-source voltage of the junction MOS transistor cannot be reversed and can be saved in the open state. When the insulated gate MOS transistor is not used, the electrodes must be short-circuited since its input resistance is very high, so as to avoid an external electric field. The MOS tube is damaged by such action.\u003C/span>\u003C/li>\r\n\u003C/ul>\r\n\u003Cul>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">When soldering, the soldering iron shell must be equipped with an external grounding wire to prevent damage to MOS tube due to electrification of the soldering iron. For a small amount of soldering, you can also solder the soldering iron after removing the plug or cutting off the power. Especially when soldering insulated gate MOS transistors, they should be soldered in the order of source-drain-gate, and the power should be cut off.\u003C/span>\u003C/li>\r\n\u003C/ul>\r\n\u003Cul>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">When soldering with 25W soldering iron, it should be fast. If soldering with 45~75W soldering iron, use the tweezers to clamp the root of the pin to help dissipate heat. The junction MOS tube can qualitatively check the quality of the MOS tube by using the table resistance file (check the resistance between the forward and reverse resistance of each PN junction and the drain source), and the insulated gate field effect tube cannot be inspected with a multimeter, and the tester must be used. Moreover, the short-circuit line of each electrode can be removed after the tester is connected. When it is removed, it should be short-circuited and then removed. The key is to avoid the gate hanging.\u003C/span>\u003C/li>\r\n\u003C/ul>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">When input impedance is a factor to consider during design process, it is necessary to take moisture-proof measures to avoid lowering the input resistance of the MOS tube due to temperature influence. If a four-lead MOS transistor is used, its substrate leads should be grounded. The ceramic packaged of the MOS tube has photosensitive properties and should be protected from light.\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">For power MOS tubes, there must be good heat dissipation conditions. Because the power MOS tube is used under high load conditions, it is necessary to design a sufficient heat sink to ensure that the temperature of MOS tube casing does not exceed the rated value, so that the MOS device can work stably and reliably for a long time.\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">In short, to ensure use of MOS tubes safely, there are many precautions to be adhered to, and the safety measures adopted are various. The vast number of professional and technical personnel required, especially the vast number of electronic enthusiasts, must proceed according to their actual conditions. Take practical measures to use MOS tubes safely and effectively.\u003C/span>\u003C/p>\r\n\u003C/div>\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">\u003C/div>\r\n\t\t\t\t\t\t\r\n\t\t\t\t\t\t\t\t\t\t\t\t\t\r\n\t\t\t\t\t\t\u003C!-- clear for photos floats -->\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">","uploads/2019/09/MOS-tube.jpg",146,"precautions-for-using-mos-metal-oxide-silicon-transistor-tubes",1776841112877]