[{"data":1,"prerenderedAt":77},["ShallowReactive",2],{"post-9d82c937745261a6f24":3,"recom-9d82c937745261a6f24":22},{"summary":4,"updateTime":5,"title":6,"cateName":7,"content":8,"tags":9,"cover":10,"createTime":11,"cateId":12,"isTop":13,"nickname":14,"siteId":15,"id":16,"isPage":13,"slug":17,"views":18,"status":19,"uid":16,"coverImageUrl":20,"createDate":21,"cate":12,"keywords":9},"Ten Daily Electronic Common Sense-Section 150 Looking for capacitors online purchase? is a reliable marketplace to buy and learn about capacitors. Come with us for amazing deals &amp; information.",1776841279931,"Ten Daily Electronic Common Sense-Section 150","Tutorials","\u003Cfigure class=\"wp-block-image size-large\">\u003Cimg fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" decoding=\"async\" width=\"650\" height=\"303\" src=\"/uploads/2023/01/01-3-650x303.png\" alt=\"\" class=\"wp-image-14641\" srcset=\"uploads/2023/01/01-3-650x303.png 650w, uploads/2023/01/01-3-400x186.png 400w, uploads/2023/01/01-3-250x117.png 250w, uploads/2023/01/01-3-768x358.png 768w, uploads/2023/01/01-3-150x70.png 150w, uploads/2023/01/01-3-800x373.png 800w, uploads/2023/01/01-3.png 869w\" sizes=\"(max-width: 650px) 100vw, 650px\" />\u003C/figure>\r\n\r\n\r\n\r\n\u003Cdiv id=\"ez-toc-container\" class=\"ez-toc-v2_0_69_1 counter-hierarchy ez-toc-counter ez-toc-grey ez-toc-container-direction\">\r\n\u003Cdiv class=\"ez-toc-title-container\">\r\n\u003Cp class=\"ez-toc-title \" >Table of Contents\u003C/p>\r\n\u003Cspan class=\"ez-toc-title-toggle\">\u003Ca href=\"#\" class=\"ez-toc-pull-right ez-toc-btn ez-toc-btn-xs ez-toc-btn-default ez-toc-toggle\" aria-label=\"Toggle Table of Content\">\u003Cspan class=\"ez-toc-js-icon-con\">\u003Cspan class=\"\">\u003Cspan class=\"eztoc-hide\" style=\"display:none;\">Toggle\u003C/span>\u003Cspan class=\"ez-toc-icon-toggle-span\">\u003Csvg style=\"fill: #999;color:#999\" xmlns=\"http://www.w3.org/2000/svg\" class=\"list-377408\" width=\"20px\" height=\"20px\" viewBox=\"0 0 24 24\" fill=\"none\">\u003Cpath d=\"M6 6H4v2h2V6zm14 0H8v2h12V6zM4 11h2v2H4v-2zm16 0H8v2h12v-2zM4 16h2v2H4v-2zm16 0H8v2h12v-2z\" fill=\"currentColor\">\u003C/path>\u003C/svg>\u003Csvg style=\"fill: #999;color:#999\" class=\"arrow-unsorted-368013\" xmlns=\"http://www.w3.org/2000/svg\" width=\"10px\" height=\"10px\" viewBox=\"0 0 24 24\" version=\"1.2\" baseProfile=\"tiny\">\u003Cpath d=\"M18.2 9.3l-6.2-6.3-6.2 6.3c-.2.2-.3.4-.3.7s.1.5.3.7c.2.2.4.3.7.3h11c.3 0 .5-.1.7-.3.2-.2.3-.5.3-.7s-.1-.5-.3-.7zM5.8 14.7l6.2 6.3 6.2-6.3c.2-.2.3-.5.3-.7s-.1-.5-.3-.7c-.2-.2-.4-.3-.7-.3h-11c-.3 0-.5.1-.7.3-.2.2-.3.5-.3.7s.1.5.3.7z\"/>\u003C/svg>\u003C/span>\u003C/span>\u003C/span>\u003C/a>\u003C/span>\u003C/div>\r\n\u003Cnav>\u003Cul class='ez-toc-list ez-toc-list-level-1 ' >\u003Cli class='ez-toc-page-1 ez-toc-heading-level-2'>\u003Ca class=\"ez-toc-link ez-toc-heading-1\" href=\"#What_parameters_are_affected_by_the_identification_range\" title=\"What parameters are affected by the identification range?\">What parameters are affected by the identification range?\u003C/a>\u003C/li>\u003Cli class='ez-toc-page-1 ez-toc-heading-level-2'>\u003Ca class=\"ez-toc-link ez-toc-heading-2\" href=\"#What_is_the_load_capacitance\" title=\"What is the load capacitance?\">What is the load capacitance?\u003C/a>\u003C/li>\u003Cli class='ez-toc-page-1 ez-toc-heading-level-2'>\u003Ca class=\"ez-toc-link ez-toc-heading-3\" href=\"#Compared_with_the_international_advanced_level_what_are_the_main_gaps_in_the_design_of_RFID_chips_in_China\" title=\"Compared with the international advanced level, what are the main gaps in the design of RFID chips in China?\">Compared with the international advanced level, what are the main gaps in the design of RFID chips in China?\u003C/a>\u003C/li>\u003Cli class='ez-toc-page-1 ez-toc-heading-level-2'>\u003Ca class=\"ez-toc-link ez-toc-heading-4\" href=\"#What_are_the_characteristics_of_the_parallel_process_program\" title=\"What are the characteristics of the parallel process program?\">What are the characteristics of the parallel process program?\u003C/a>\u003C/li>\u003Cli class='ez-toc-page-1 ez-toc-heading-level-2'>\u003Ca class=\"ez-toc-link ez-toc-heading-5\" href=\"#What_are_the_disadvantages_of_barcodes\" title=\"What are the disadvantages of barcodes?\">What are the disadvantages of barcodes?\u003C/a>\u003C/li>\u003Cli class='ez-toc-page-1 ez-toc-heading-level-2'>\u003Ca class=\"ez-toc-link ez-toc-heading-6\" href=\"#What_are_the_main_characteristics_of_the_magnetic_triode\" title=\"What are the main characteristics of the magnetic triode?\">What are the main characteristics of the magnetic triode?\u003C/a>\u003C/li>\u003Cli class='ez-toc-page-1 ez-toc-heading-level-2'>\u003Ca class=\"ez-toc-link ez-toc-heading-7\" href=\"#What_is_the_reason_why_the_vibrator_is_selected_as_a_tuning_fork_type\" title=\"What is the reason why the vibrator is selected as a tuning fork type?\">What is the reason why the vibrator is selected as a tuning fork type?\u003C/a>\u003C/li>\u003Cli class='ez-toc-page-1 ez-toc-heading-level-2'>\u003Ca class=\"ez-toc-link ez-toc-heading-8\" href=\"#Why_pyroelectric_sensors\" title=\"Why pyroelectric sensors?\">Why pyroelectric sensors?\u003C/a>\u003C/li>\u003Cli class='ez-toc-page-1 ez-toc-heading-level-2'>\u003Ca class=\"ez-toc-link ez-toc-heading-9\" href=\"#What_are_the_main_features_of_the_bundle_layer_structure\" title=\"What are the main features of the bundle layer structure?\">What are the main features of the bundle layer structure?\u003C/a>\u003C/li>\u003Cli class='ez-toc-page-1 ez-toc-heading-level-2'>\u003Ca class=\"ez-toc-link ez-toc-heading-10\" href=\"#What_is_linearity\" title=\"What is linearity?\">What is linearity?\u003C/a>\u003C/li>\u003C/ul>\u003C/nav>\u003C/div>\r\n\u003Ch2 class=\"wp-block-heading\">\u003Cspan class=\"ez-toc-section\" id=\"What_parameters_are_affected_by_the_identification_range\">\u003C/span>What parameters are affected by the identification range?\u003Cspan class=\"ez-toc-section-end\">\u003C/span>\u003C/h2>\r\n\r\n\r\n\r\n\u003Cp>The recognition range is one of the most important parameters of RFID tags, which is mainly affected by two parameters.\u003Cbr>They are the maximum distance Rtag (tag activation distance) at which the tag can just obtain enough power from the reader and the maximum distance Rreader at which the reader can detect the backscattered signal of the tag.\u003Cbr>The effective recognition range takes the smaller value min(Rtagg, Rreader) of these two distances.\u003C/p>\r\n\r\n\r\n\r\n\u003Ch2 class=\"wp-block-heading\">\u003Cspan class=\"ez-toc-section\" id=\"What_is_the_load_capacitance\">\u003C/span>What is the load capacitance?\u003Cspan class=\"ez-toc-section-end\">\u003C/span>\u003C/h2>\r\n\r\n\r\n\r\n\u003Cp>Load capacitance is an extremely important parameter to describe the application characteristics of a quartz crystal oscillator. the\u003Cbr>In the application, the crystal oscillator forms an oscillation circuit with other circuits and components. When the crystal oscillator is powered on, it will resonate and trigger the oscillator circuit to oscillate. Generate the same signal as the resonant frequency of the crystal oscillator, so that the electrical appliances can work normally and stably. the\u003Cbr>The load capacitance of the crystal oscillator refers to the equivalent capacitance seen from the two pins of the crystal oscillator to the direction of the oscillation circuit. It refers to the sum of the effective capacitance formed by the circuit and components associated with the two pins of the crystal oscillator. the\u003Cbr>In practice, the crystal oscillator and load capacitance must be matched. Otherwise, it will affect the oscillation signal to deviate from the resonant frequency of the crystal oscillator, so that the electrical appliances cannot work normally or stop working. the\u003Cbr>There are two types of load capacitors for common crystal oscillators. One is low load capacitance and the other is high load capacitance.\u003C/p>\r\n\r\n\r\n\r\n\u003Cfigure class=\"wp-block-image size-full\">\u003Cimg decoding=\"async\" width=\"482\" height=\"242\" src=\"/uploads/2023/01/1505.png\" alt=\"\" class=\"wp-image-14642\" srcset=\"uploads/2023/01/1505.png 482w, uploads/2023/01/1505-400x201.png 400w, uploads/2023/01/1505-250x126.png 250w, uploads/2023/01/1505-150x75.png 150w\" sizes=\"(max-width: 482px) 100vw, 482px\" />\u003C/figure>\r\n\r\n\r\n\r\n\u003Ch2 class=\"wp-block-heading\">\u003Cspan class=\"ez-toc-section\" id=\"Compared_with_the_international_advanced_level_what_are_the_main_gaps_in_the_design_of_RFID_chips_in_China\">\u003C/span>Compared with the international advanced level, what are the main gaps in the design of RFID chips in China?\u003Cspan class=\"ez-toc-section-end\">\u003C/span>\u003C/h2>\r\n\r\n\r\n\r\n\u003Col>\u003Cli>Foreign countries started earlier in the design of RFID chips, and applied for many technical patents. However, China started relatively late, and the foundation of RFID chip design in UHF and microwave frequency bands is still relatively weak.\u003C/li>\u003Cli>In terms of memory, developed countries have begun to use standard CMOS technology to design non-volatile memory. It is possible to make all modules of the electronic tag under the standard CMOS process, so as to reduce the production cost. However, it is still in the research stage in China.\u003C/li>\u003Cli>Electronic tags are sensitive to cost, and chip design requires professionals with rich experience in analog circuit and digital-analog hybrid circuit design. The domestic technical force in this area is relatively weak.\u003C/li>\u003C/ol>\r\n\r\n\r\n\r\n\u003Ch2 class=\"wp-block-heading\">\u003Cspan class=\"ez-toc-section\" id=\"What_are_the_characteristics_of_the_parallel_process_program\">\u003C/span>What are the characteristics of the parallel process program?\u003Cspan class=\"ez-toc-section-end\">\u003C/span>\u003C/h2>\r\n\r\n\r\n\r\n\u003Cul>\u003Cli>The parallel flow program with 3 branches has the following characteristics:\u003Col>\u003Cli>If S20 has been activated, only the branch transfer condition X0 is established. The three processes (S21, S22, S31, S32, S41, S42) are executed in parallel at the same time, and there is no sequence.\u003C/li>\u003Cli>When the actions of each process are all finished (the process that is executed first must wait for the completion of all process actions). Once X2 is ON, the confluence state S50 will act, and all S22, S32, and S42 will be reset. If one of the processes is not finished, then S50 cannot act. In addition, a parallel process program may have two or more states in the &#8220;active&#8221; state at the same time.\u003C/li>\u003C/ol>\u003C/li>\u003C/ul>\r\n\r\n\r\n\r\n\u003Cfigure class=\"wp-block-image size-full\">\u003Cimg decoding=\"async\" width=\"450\" height=\"206\" src=\"/uploads/2023/01/1506.jpg\" alt=\"\" class=\"wp-image-14643\" srcset=\"uploads/2023/01/1506.jpg 450w, uploads/2023/01/1506-400x183.jpg 400w, uploads/2023/01/1506-250x114.jpg 250w, uploads/2023/01/1506-150x69.jpg 150w\" sizes=\"(max-width: 450px) 100vw, 450px\" />\u003C/figure>\r\n\r\n\r\n\r\n\u003Ch2 class=\"wp-block-heading\">\u003Cspan class=\"ez-toc-section\" id=\"What_are_the_disadvantages_of_barcodes\">\u003C/span>What are the disadvantages of barcodes?\u003Cspan class=\"ez-toc-section-end\">\u003C/span>\u003C/h2>\r\n\r\n\r\n\r\n\u003Cul>\u003Cli>The barcode must face the scanner to successfully read the barcode information.\u003C/li>\u003Cli>If the barcode or label is torn, undamaged, or peeled off, these items cannot be identified.\u003C/li>\u003Cli>Bar codes can only identify the manufacturer and product category, not a specific and unique item.\u003C/li>\u003C/ul>\r\n\r\n\r\n\r\n\u003Ch2 class=\"wp-block-heading\">\u003Cspan class=\"ez-toc-section\" id=\"What_are_the_main_characteristics_of_the_magnetic_triode\">\u003C/span>What are the main characteristics of the magnetic triode?\u003Cspan class=\"ez-toc-section-end\">\u003C/span>\u003C/h2>\r\n\r\n\r\n\r\n\u003Col>\u003Cli>Volt-ampere characteristics\u003C/li>\u003Cli>Magnetoelectric characteristics、\u003C/li>\u003Cli>Temperature characteristics\u003C/li>\u003C/ol>\r\n\r\n\r\n\r\n\u003Cfigure class=\"wp-block-image size-large\">\u003Cimg loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" decoding=\"async\" width=\"650\" height=\"450\" src=\"/uploads/2023/01/1511-650x450.jpg\" alt=\"\" class=\"wp-image-14644\" srcset=\"uploads/2023/01/1511-650x450.jpg 650w, uploads/2023/01/1511-400x277.jpg 400w, uploads/2023/01/1511-250x173.jpg 250w, uploads/2023/01/1511-768x532.jpg 768w, uploads/2023/01/1511-1536x1064.jpg 1536w, uploads/2023/01/1511-2048x1418.jpg 2048w, uploads/2023/01/1511-150x104.jpg 150w, uploads/2023/01/1511-800x554.jpg 800w, uploads/2023/01/1511-1200x831.jpg 1200w, uploads/2023/01/1511-1600x1108.jpg 1600w, uploads/2023/01/1511-2000x1385.jpg 2000w\" sizes=\"(max-width: 650px) 100vw, 650px\" />\u003C/figure>\r\n\r\n\r\n\r\n\u003Ch2 class=\"wp-block-heading\">\u003Cspan class=\"ez-toc-section\" id=\"What_is_the_reason_why_the_vibrator_is_selected_as_a_tuning_fork_type\">\u003C/span>What is the reason why the vibrator is selected as a tuning fork type?\u003Cspan class=\"ez-toc-section-end\">\u003C/span>\u003C/h2>\r\n\r\n\r\n\r\n\u003Cp>Because the two vibrators move in opposite directions, the direction of the Coriolis force is also opposite.\u003Cbr>In this way, the deflection deformation caused by acceleration in the front, rear and left and right directions of the vehicle can cancel each other out.\u003Cbr>Therefore, only the angular velocity signal can be output from the detection PZT.\u003C/p>\r\n\r\n\r\n\r\n\u003Ch2 class=\"wp-block-heading\">\u003Cspan class=\"ez-toc-section\" id=\"Why_pyroelectric_sensors\">\u003C/span>Why pyroelectric sensors?\u003Cspan class=\"ez-toc-section-end\">\u003C/span>\u003C/h2>\r\n\r\n\r\n\r\n\u003Cp>The polarization (charge per unit area) of ferroelectrics is temperature dependent.\u003Cbr>When infrared radiation strikes the surface of an already polarized ferroelectric sheet, it causes the sheet to increase in temperature. It reduces the polarization intensity and reduces the surface charge. This is equivalent to releasing part of the charge, so it is called a pyroelectric sensor.\u003C/p>\r\n\r\n\r\n\r\n\u003Cfigure class=\"wp-block-image size-large\">\u003Cimg loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" decoding=\"async\" width=\"650\" height=\"504\" src=\"/uploads/2023/01/1508-650x504.png\" alt=\"\" class=\"wp-image-14646\" srcset=\"uploads/2023/01/1508-650x504.png 650w, uploads/2023/01/1508-400x310.png 400w, uploads/2023/01/1508-250x194.png 250w, uploads/2023/01/1508-768x596.png 768w, uploads/2023/01/1508-150x116.png 150w, uploads/2023/01/1508-800x620.png 800w, uploads/2023/01/1508-1200x931.png 1200w, uploads/2023/01/1508.png 1225w\" sizes=\"(max-width: 650px) 100vw, 650px\" />\u003C/figure>\r\n\r\n\r\n\r\n\u003Ch2 class=\"wp-block-heading\">\u003Cspan class=\"ez-toc-section\" id=\"What_are_the_main_features_of_the_bundle_layer_structure\">\u003C/span>What are the main features of the bundle layer structure?\u003Cspan class=\"ez-toc-section-end\">\u003C/span>\u003C/h2>\r\n\r\n\r\n\r\n\u003Cul>\u003Cli>Region and gateway. An area is a specific network with specific protocols and communication requirements, such as the four areas A, B, C, and D in Figure 1.1. Area B includes a bus carrying a DTN gateway, which travels between DTN gateway 3 and DTN gateway 5 . Region D includes a regularly connected satellite link. A gateway is essentially an access point used to connect two areas with different network architectures and protocol stacks. It consists of two logical parts that sit on top of the corresponding transport layer protocols of two adjacent areas. Two nodes are said to be in the same area if they can communicate without going through a DTN gateway. Area boundaries are used to represent interconnection points between different network protocol stacks, as shown in Fig. l. 2 is the logical view of the DTN gateway. When it is necessary to ensure reliable delivery of messages, DTN gateways are responsible for storing messages in persistent storage. In addition, the DTN gateway also needs to assume the responsibility of mapping between different transmission protocols.\u003C/li>\u003Cli>Name tuple. For message routing, DTN takes the form of a name tuple to identify a destination node or group of destination nodes. A name tuple consists of two variable-length parts of the form {region-name, entity-name) . The region name is globally unique and has strict topological meaning through hierarchical construction. The entity name is the name of the node in a specific area, which is unique within the area but not unique outside the area, and can be of any structure.\u003C/li>\u003Cli>Postal-style delivery service. All kinds of network resources in DTN are strictly limited, so it is necessary to adopt priority-based resource allocation and message transmission mechanism. Similar to postal services, the DTN architecture adopts three priorities: Bulk, Normal, and Expedited, which conceptually correspond to low, medium, and high priorities respectively.\u003C/li>\u003Cli>Routing. In the routing and forwarding framework provided by the DTN architecture, DTN is defined as a multigraph, that is, there may be multiple connection edges between nodes. Based on network characteristics, the contact between nodes is classified as Persistent, On. There are five types of demand, Scheduled, Predicted, and Opportunistic, of which the latter three are the most common in DTN. To provide maximum flexibility in area design, the DTN architecture itself does not specify any particular type of routing mechanism.\u003C/li>\u003Cli>Reliability and custody transfer. Custodial transport is a concept proposed to maintain end-to-end connection state and deal with high packet loss rate and lack of resources. Its core means that the message jumps from one DTN node to the next DTN node and realizes reliable delivery. According to the storage capacity of the nodes, the DTN architecture divides the nodes into two categories: persistent and non-persistent. The former has sufficient storage resources, while the latter has relatively insufficient storage resources. DTN is faced with a high message packet loss rate, and it is necessary to ensure that those nodes that do not have sufficient resources do not have to undertake and maintain the task of end-to-end reliable transmission. Therefore, once a custodial bundle is delivered to a Persistent node, the source node does not have to keep maintaining a copy of the bundle.\u003C/li>\u003Cli>Convergence layer. There may be significant changes in the functions provided by the bottom layer of the DTN architecture, such as reliable transmission, flow control, and congestion control. Assuming that the underlying layer can achieve reliable transmission, it is necessary to add a protocol stack containing a specific aggregation layer to ensure the realization of these underlying functions. For example, when reliable delivery is provided by the underlying transport, the corresponding aggregation layer only needs to provide corresponding link state management. Figure l. 3 describes a typical DTN protocol stack.\u003C/li>\u003Cli>Time synchronization. The DTN architecture requires time synchronization between communicating nodes. This requirement originates from the fact that many distributed applications in challenging environments need time synchronization, such as message bundle identification, routing scheduling, message lifetime calculation, etc., which are usually completed through an external non-DTN protocol.\u003C/li>\u003Cli>Flow contr01 and Congestion contr01. Flow control in DTN architecture refers to limiting the sending rate of DTN nodes to match the receiving rate of next-hop nodes. Flow control decisions must be made within the binding layer, although it may require support from the underlying transport layer. Congestion control refers to dealing with competition for persistent storage resources in the DTN gateway. The RFC standard does not specify a specific congestion control mechanism, so the congestion control mechanism is an open research problem.\u003C/li>\u003Cli>Security. The security of the DTN architecture requires restricting access to available scarce resources, and its main goal is to prevent unauthorized applications from exploiting network resources and to prevent authorized applications from accessing services of a higher rank than their own. Therefore, it becomes necessary to identify and discard damaged message bundles and detect damaged nodes. A popular security mechanism is the hop-by-hop and end-to-end authentication and integrity mechanisms, whose purpose is to use the data integrity of the application layer to implement access control for data forwarding and storage respectively.\u003C/li>\u003C/ul>\r\n\r\n\r\n\r\n\u003Ch2 class=\"wp-block-heading\">\u003Cspan class=\"ez-toc-section\" id=\"What_is_linearity\">\u003C/span>What is linearity?\u003Cspan class=\"ez-toc-section-end\">\u003C/span>\u003C/h2>\r\n\r\n\r\n\r\n\u003Cp>Linearity refers to the degree of linearity between the irradiation light intensity and the generated signal charge.\u003C/p>\r\n\r\n\r\n\r\n\u003Cfigure class=\"wp-block-image size-full\">\u003Cimg loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" decoding=\"async\" width=\"312\" height=\"235\" src=\"/uploads/2023/01/1510.jpg\" alt=\"\" class=\"wp-image-14645\" srcset=\"uploads/2023/01/1510.jpg 312w, uploads/2023/01/1510-250x188.jpg 250w, uploads/2023/01/1510-150x113.jpg 150w\" sizes=\"(max-width: 312px) 100vw, 312px\" />\u003C/figure>\r\n\u003C/div>\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">\u003C/div>\r\n\t\t\t\t\t\t\r\n\t\t\t\t\t\t\t\t\t\t\t\t\t\r\n\t\t\t\t\t\t\u003C!-- clear for photos floats -->\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">","Electronic","uploads/2023/01/01-3-650x303.png",1776793312000,"20db6653d7e85fded62",0,"Admin","2028706543895019522","9d82c937745261a6f24","ten-daily-electronic-common-sense-section-150",396,1,"/uploads/2023/01/01-3-650x303.png","Apr 22, 2026",[23,33,42,50,60,69],{"id":24,"title":25,"summary":26,"content":27,"cover":28,"cateId":12,"tags":28,"views":29,"isTop":13,"status":19,"createBy":28,"createTime":30,"updateBy":28,"updateTime":31,"institutionId":28,"isPage":13,"images":28,"horizontalCover":28,"verticalCover":28,"slug":32,"siteId":15},"c047d1a580d380475ed","What are the development tools for supporting 2802x-based applications?","What are the development tools for supporting 2802x-based applications? Looking for capacitors online purchase? is a reliable marketplace to buy and learn about capacitors. Come with us for amazing deals &amp; information.","\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva; font-size: 12pt;\">\u003Cspan style=\"color: #c70a0a;\">*\u003C/span> \u003Cspan style=\"color: #808080;\">Question\u003C/span>\u003C/span>\u003C/p>\r\n\u003Ctable>\r\n\u003Ctbody>\r\n\u003Ctr>\r\n\u003Ctd width=\"1136\">What are the development tools for supporting 2802x-based applications?\u003C/td>\r\n\u003C/tr>\r\n\u003C/tbody>\r\n\u003C/table>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Cspan style=\"color: #c70a0a;\">\u003Cbr />\r\n\u003Cspan style=\"font-size: 12pt;\">*\u003C/span>\u003C/span>\u003Cspan style=\"color: #808080; font-size: 12pt;\"> Answer\u003C/span>\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-size: inherit;\">● CodeComposerStudi0 integrated development environment IDE &#8211; c / c compiler A code generation tool An assembler / linker One cycle accurate simulator \u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-size: inherit;\">● Application algorithm · \u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-size: inherit;\">\u003C/span>\u003C/p>\r\n\u003C/div>\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">\u003C/div>\r\n\t\t\t\t\t\t\r\n\t\t\t\t\t\t\t\t\t\t\t\t\t\r\n\t\t\t\t\t\t\u003C!-- clear for photos floats -->\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">",null,238,"2026-04-22 01:44:14","2026-04-22 14:58:27","what-are-the-development-tools-for-supporting-2802x-based-applications",{"id":34,"title":35,"summary":36,"content":37,"cover":28,"cateId":12,"tags":38,"views":39,"isTop":13,"status":19,"createBy":28,"createTime":40,"updateBy":28,"updateTime":31,"institutionId":28,"isPage":13,"images":28,"horizontalCover":28,"verticalCover":28,"slug":41,"siteId":15},"6d16643f4061eb43174","What is the thermocouple sensor made of?","What is the thermocouple sensor made of? Looking for capacitors online purchase? is a reliable marketplace to buy and learn about capacitors. Come with us for amazing deals &amp; information.","\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva; font-size: 12pt;\">\u003Cspan style=\"color: #c70a0a;\">*\u003C/span> \u003Cspan style=\"color: #808080;\">Question\u003C/span>\u003C/span>\u003C/p>\r\n\u003Ctable>\r\n\u003Ctbody>\r\n\u003Ctr>\r\n\u003Ctd width=\"1136\">\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">What is the thermocouple sensor made of?\u003C/span>\u003C/td>\r\n\u003C/tr>\r\n\u003C/tbody>\r\n\u003C/table>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Cspan style=\"color: #c70a0a;\">\u003Cbr />\r\n\u003Cspan style=\"font-size: 12pt;\">*\u003C/span>\u003C/span>\u003Cspan style=\"color: #808080; font-size: 12pt;\"> Answer\u003C/span>\u003C/span>\u003C/p>\r\n\u003Ctable>\r\n\u003Ctbody>\r\n\u003Ctr>\r\n\u003Ctd width=\"1136\">\u003Cspan style=\"font-family: trebuchet-ms;\">A thermocouple sensor is a thermal sensor that uses thermoelectric phenomena.\u003C/span>\u003C/td>\r\n\u003C/tr>\r\n\u003C/tbody>\r\n\u003C/table>\r\n\u003Cp>\u003Cspan style=\"font-size: inherit;\">\u003Cbr />\r\n\u003C/span>\u003C/p>","sensor",229,"2026-04-22 01:43:58","what-is-the-thermocouple-sensor-made-of",{"id":43,"title":44,"summary":45,"content":46,"cover":28,"cateId":12,"tags":47,"views":48,"isTop":13,"status":19,"createBy":28,"createTime":40,"updateBy":28,"updateTime":31,"institutionId":28,"isPage":13,"images":28,"horizontalCover":28,"verticalCover":28,"slug":49,"siteId":15},"61750966158705a45ac","What is the goal of software design for terminal nodes?","What is the goal of software design for terminal nodes? Looking for capacitors online purchase? is a reliable marketplace to buy and learn about capacitors. Come with us for amazing deals &amp; information.","\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva; font-size: 12pt;\">\u003Cspan style=\"color: #c70a0a;\">*\u003C/span> \u003Cspan style=\"color: #808080;\">Question\u003C/span>\u003C/span>\u003C/p>\r\n\u003Ctable>\r\n\u003Ctbody>\r\n\u003Ctr>\r\n\u003Ctd width=\"1136\">What is the goal of software design for terminal nodes?\u003C/td>\r\n\u003C/tr>\r\n\u003C/tbody>\r\n\u003C/table>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Cspan style=\"color: #c70a0a;\">\u003Cbr />\r\n\u003Cspan style=\"font-size: 12pt;\">*\u003C/span>\u003C/span>\u003Cspan style=\"color: #808080; font-size: 12pt;\"> Answer\u003C/span>\u003C/span>\u003C/p>\r\n\u003Ctable>\r\n\u003Ctbody>\r\n\u003Ctr>\r\n\u003Ctd width=\"1136\">Data acquisition of analog input and digital input through C language, that is, collecting parameters from electrical equipment in power grid and substation, and classifying data to master the operation status of the substation and the status of electrical equipment in the station;The command, the jump switch, to achieve the purpose of monitoring and control.\u003C/td>\r\n\u003C/tr>\r\n\u003C/tbody>\r\n\u003C/table>\r\n\u003Cp>\u003Cspan style=\"font-size: inherit;\">\u003Cbr />\r\n\u003C/span>\u003C/p>\r\n\u003C/div>\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">\u003C/div>\r\n\t\t\t\t\t\t\r\n\t\t\t\t\t\t\t\t\t\t\t\t\t\r\n\t\t\t\t\t\t\u003C!-- clear for photos floats -->\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">","design,terminal",224,"what-is-the-goal-of-software-design-for-terminal-nodes",{"id":51,"title":52,"summary":53,"content":54,"cover":55,"cateId":12,"tags":28,"views":56,"isTop":13,"status":19,"createBy":28,"createTime":57,"updateBy":28,"updateTime":58,"institutionId":28,"isPage":13,"images":28,"horizontalCover":28,"verticalCover":28,"slug":59,"siteId":15},"a39a5d8553e41a5005a","Template Analysis Method For EMC Problems","Template Analysis Method For EMC Problems Looking for capacitors online purchase? is a reliable marketplace to buy and learn about capacitors. Come with us for amazing deals &amp; information.","\u003Ctable>\r\n\u003Ctbody>\r\n\u003Ctr>\r\n\u003Ctd width=\"198\">\r\n\u003Cp>\u003Cdiv id=\"attachment_5001\" style=\"width: 265px\" class=\"wp-caption alignnone\">\u003Cimg loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" aria-describedby=\"caption-attachment-5001\" decoding=\"async\" class=\" wp-image-5001\" src=\"uploads/2019/10/Forms-of-electromagnetic-interference-400x224.jpg\" alt=\"\" width=\"255\" height=\"143\" srcset=\"uploads/2019/10/Forms-of-electromagnetic-interference-400x224.jpg 400w, uploads/2019/10/Forms-of-electromagnetic-interference-250x140.jpg 250w, uploads/2019/10/Forms-of-electromagnetic-interference-150x84.jpg 150w, uploads/2019/10/Forms-of-electromagnetic-interference.jpg 640w\" sizes=\"(max-width: 255px) 100vw, 255px\" />\u003Cp id=\"caption-attachment-5001\" class=\"wp-caption-text\">\u003C/span> \u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The form of electromagnetic interference\u003C/span>\u003C/p>\u003C/div>\u003C/td>\r\n\u003Ctd width=\"425\">\r\n\u003Cp>\u003Cdiv id=\"attachment_5004\" style=\"width: 376px\" class=\"wp-caption alignnone\">\u003Cimg fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" aria-describedby=\"caption-attachment-5004\" fetchpriority=\"high\" decoding=\"async\" class=\" wp-image-5004\" src=\"uploads/2019/10/The-main-form-of-electromagnetic-interference-400x182.jpg\" alt=\"\" width=\"366\" height=\"166\" srcset=\"uploads/2019/10/The-main-form-of-electromagnetic-interference-400x182.jpg 400w, uploads/2019/10/The-main-form-of-electromagnetic-interference-250x114.jpg 250w, uploads/2019/10/The-main-form-of-electromagnetic-interference-150x68.jpg 150w, uploads/2019/10/The-main-form-of-electromagnetic-interference.jpg 562w\" sizes=\"(max-width: 366px) 100vw, 366px\" />\u003Cp id=\"caption-attachment-5004\" class=\"wp-caption-text\">\u003C/span> \u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The main form of electromagnetic interference\u003C/span>\u003C/p>\u003C/div>\u003C/td>\r\n\u003C/tr>\r\n\u003C/tbody>\r\n\u003C/table>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The electromagnetic interference problem is a key issue in any hardware design field. It is especially important to understand the initial dry electromagnetic interference problem to solve this problem.\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Cstrong>The electromagnetic interference model has three basic elements:\u003C/strong>\u003C/span>\u003C/p>\r\n\u003Col>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">There is electromagnetic interference energy.\u003C/span>\u003C/li>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">There is a device that is subject to electromagnetic interference.\u003C/span>\u003C/li>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">There is a coupling channel to transmit electromagnetic energy between the interfered and interfered devices.\u003C/span>\u003C/li>\r\n\u003C/ol>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Electromagnetic interference only occurs when these three basic elements are met at the same time. EMC engineers should determine the EMC design content and design direction based on the physical structure.\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The EMC analysis template is determined by the electrical length of the structure. Converting the physical dimensions of the device structure to electrical length is the starting point for design and problem finding. The combination and connection of templates constitute a model for analyzing electromagnetic compatibility problems. The template analysis method is to select the appropriate template and electromagnetic logic connection according to the actual problem and structure to form a dynamic process of complete electromagnetic interference phenomenon.\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The EMC design of printed circuit boards is the cheapest and most effective way to eliminate the main sources of RF interference. When the interference source on the printed circuit board and the victim device exist in the same small space, the engineer must control the electromagnetic energy generated. This means that electromagnetic energy is only present at the required assembly parts. This is the method of removing EMC problems, electromagnetic suppression or electromagnetic cancellation.\u003C/span>\u003C/p>\r\n\u003C/div>\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">\u003C/div>\r\n\t\t\t\t\t\t\r\n\t\t\t\t\t\t\t\t\t\t\t\t\t\r\n\t\t\t\t\t\t\u003C!-- clear for photos floats -->\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">","uploads/2019/10/Forms-of-electromagnetic-interference-400x224.jpg",498,"2026-04-22 01:43:54","2026-04-22 14:58:28","template-analysis-method-for-emc-problems",{"id":61,"title":62,"summary":63,"content":64,"cover":65,"cateId":12,"tags":28,"views":66,"isTop":13,"status":19,"createBy":28,"createTime":67,"updateBy":28,"updateTime":58,"institutionId":28,"isPage":13,"images":28,"horizontalCover":28,"verticalCover":28,"slug":68,"siteId":15},"86325bcdfe62f25cc0b","Judgment Method of Three Types of Amplifiers","Judgment Method of Three Types of Amplifiers Looking for capacitors online purchase? is a reliable marketplace to buy and learn about capacitors. Come with us for amazing deals &amp; information.","\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Triode based audio and electronic amplifiers are very commonly found in many walks of life. Although, the transistor based amplifiers created the danger of obsolescence of tube amplifiers, the tube amplifiers have succeeded in maintaining a cult following amongst the audiophiles. The main reason behind this is the warm and crunchy sound response of tube amplifiers.\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The main component in tube amplifiers is the triode. Triode is essentially an amplifying vacuum tube which consists of three electrodes inside a glass casing. The electrodes are known as anode, cathode, and grid respectively. Triodes were widely used in all types of electronic circuits until they got replaced by transistors. [\u003Ca href=\"#Lee19\">1\u003C/a>]\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">According to the electronic circuit configuration, there are three main types of amplifiers. These types include common emitter, common collector, and common base amplifiers. Following sub-sections provide an ample discussion on these amplifier types.\u003C/span>\u003C/p>\r\n\u003Cdiv id=\"ez-toc-container\" class=\"ez-toc-v2_0_69_1 counter-hierarchy ez-toc-counter ez-toc-grey ez-toc-container-direction\">\r\n\u003Cdiv class=\"ez-toc-title-container\">\r\n\u003Cp class=\"ez-toc-title \" >Table of Contents\u003C/p>\r\n\u003Cspan class=\"ez-toc-title-toggle\">\u003Ca href=\"#\" class=\"ez-toc-pull-right ez-toc-btn ez-toc-btn-xs ez-toc-btn-default ez-toc-toggle\" aria-label=\"Toggle Table of Content\">\u003Cspan class=\"ez-toc-js-icon-con\">\u003Cspan class=\"\">\u003Cspan class=\"eztoc-hide\" style=\"display:none;\">Toggle\u003C/span>\u003Cspan class=\"ez-toc-icon-toggle-span\">\u003Csvg style=\"fill: #999;color:#999\" xmlns=\"http://www.w3.org/2000/svg\" class=\"list-377408\" width=\"20px\" height=\"20px\" viewBox=\"0 0 24 24\" fill=\"none\">\u003Cpath d=\"M6 6H4v2h2V6zm14 0H8v2h12V6zM4 11h2v2H4v-2zm16 0H8v2h12v-2zM4 16h2v2H4v-2zm16 0H8v2h12v-2z\" fill=\"currentColor\">\u003C/path>\u003C/svg>\u003Csvg style=\"fill: #999;color:#999\" class=\"arrow-unsorted-368013\" xmlns=\"http://www.w3.org/2000/svg\" width=\"10px\" height=\"10px\" viewBox=\"0 0 24 24\" version=\"1.2\" baseProfile=\"tiny\">\u003Cpath d=\"M18.2 9.3l-6.2-6.3-6.2 6.3c-.2.2-.3.4-.3.7s.1.5.3.7c.2.2.4.3.7.3h11c.3 0 .5-.1.7-.3.2-.2.3-.5.3-.7s-.1-.5-.3-.7zM5.8 14.7l6.2 6.3 6.2-6.3c.2-.2.3-.5.3-.7s-.1-.5-.3-.7c-.2-.2-.4-.3-.7-.3h-11c-.3 0-.5.1-.7.3-.2.2-.3.5-.3.7s.1.5.3.7z\"/>\u003C/svg>\u003C/span>\u003C/span>\u003C/span>\u003C/a>\u003C/span>\u003C/div>\r\n\u003Cnav>\u003Cul class='ez-toc-list ez-toc-list-level-1 ' >\u003Cli class='ez-toc-page-1 ez-toc-heading-level-1'>\u003Ca class=\"ez-toc-link ez-toc-heading-1\" href=\"#Common_Emitter_Amplifier\" title=\"Common Emitter Amplifier\">Common Emitter Amplifier\u003C/a>\u003C/li>\u003Cli class='ez-toc-page-1 ez-toc-heading-level-1'>\u003Ca class=\"ez-toc-link ez-toc-heading-2\" href=\"#Common_Collector_Amplifier\" title=\"Common Collector Amplifier\">Common Collector Amplifier\u003C/a>\u003C/li>\u003Cli class='ez-toc-page-1 ez-toc-heading-level-1'>\u003Ca class=\"ez-toc-link ez-toc-heading-3\" href=\"#Common_Base_Amplifier\" title=\"Common Base Amplifier\">Common Base Amplifier\u003C/a>\u003C/li>\u003Cli class='ez-toc-page-1 ez-toc-heading-level-1'>\u003Ca class=\"ez-toc-link ez-toc-heading-4\" href=\"#Works_Cited\" title=\"Works Cited\">Works Cited\u003C/a>\u003C/li>\u003C/ul>\u003C/nav>\u003C/div>\r\n\u003Ch1>\u003Cspan class=\"ez-toc-section\" id=\"Common_Emitter_Amplifier\">\u003C/span>\u003Cspan style=\"font-size: 14pt; font-family: 'Trebuchet MS', Geneva;\">Common Emitter Amplifier\u003C/span>\u003Cspan class=\"ez-toc-section-end\">\u003C/span>\u003C/h1>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Common emitter amplifiers are the most widely used type of amplifiers. Common emitter amplifiers can be identified easily by the grounded emitter terminal. Like all other amplifiers, the CE amplifier also operates on an AC input. The common emitter amplifier is a single-stage amplifier which uses a BJT transistor or a triode as an amplifying element. The circuit of common emitter amplifier is given as following:\u003C/span>\u003C/p>\r\n\u003Cdiv id=\"attachment_4685\" style=\"width: 670px\" class=\"wp-caption alignnone\">\u003Cimg fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" aria-describedby=\"caption-attachment-4685\" fetchpriority=\"high\" decoding=\"async\" class=\" wp-image-4685\" src=\"uploads/2019/09/Figure-1-Common-Emitter-Amplifier-Circuit.jpg\" alt=\"\" width=\"660\" height=\"512\" srcset=\"uploads/2019/09/Figure-1-Common-Emitter-Amplifier-Circuit.jpg 387w, uploads/2019/09/Figure-1-Common-Emitter-Amplifier-Circuit-250x194.jpg 250w, uploads/2019/09/Figure-1-Common-Emitter-Amplifier-Circuit-150x116.jpg 150w\" sizes=\"(max-width: 660px) 100vw, 660px\" />\u003Cp id=\"caption-attachment-4685\" class=\"wp-caption-text\">\u003C/span> \u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Figure 1: Common Emitter Amplifier Circuit\u003C/span>\u003C/p>\u003C/div>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Ca href=\"https://www.elprocus.com/common-emitter-amplifier-circuit-working/\">https://www.elprocus.com/common-emitter-amplifier-circuit-working/\u003C/a>\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The resistors R1 and R2 form a voltage divider circuit which is used for biasing the transistor. The resistor R\u003Csub>E \u003C/sub>provides thermal stability to the amplifier. A coupling capacitor is present on the input side of the transistor which filters out DC component from the signal. [\u003Ca href=\"#Tar19\">2\u003C/a>]\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Major advantages of common emitter amplifier include low input impedance, high output impedance, high power gain, low noise, and high current gain. Main disadvantages of common emitter amplifier include unsuitability for high frequencies, unstable voltage gain, high thermal instability, and high output resistance. The CE amplifiers find their applications in low frequency voltage amplifiers, RF circuits, and low noise amplifiers. [\u003Ca href=\"#Tar19\">2\u003C/a>]\u003C/span>\u003C/p>\r\n\u003Ch1>\u003Cspan class=\"ez-toc-section\" id=\"Common_Collector_Amplifier\">\u003C/span>\u003Cspan style=\"font-size: 14pt; font-family: 'Trebuchet MS', Geneva;\">Common Collector Amplifier\u003C/span>\u003Cspan class=\"ez-toc-section-end\">\u003C/span>\u003C/h1>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The common collector amplifier can be identified from the grounded collector terminal of the triode or the transistor. The common collector amplifiers are mostly used as buffers in multi-stage amplifier circuits. The CC amplifier circuit is given as following:\u003C/span>\u003C/p>\r\n\u003Cdiv id=\"attachment_4686\" style=\"width: 633px\" class=\"wp-caption alignnone\">\u003Cimg loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" aria-describedby=\"caption-attachment-4686\" decoding=\"async\" class=\" wp-image-4686\" src=\"uploads/2019/09/Figure-2-Common-Collector-Amplifier-or-Emitter-Follower-Circuit.jpg\" alt=\"\" width=\"623\" height=\"509\" srcset=\"uploads/2019/09/Figure-2-Common-Collector-Amplifier-or-Emitter-Follower-Circuit.jpg 329w, uploads/2019/09/Figure-2-Common-Collector-Amplifier-or-Emitter-Follower-Circuit-250x204.jpg 250w, uploads/2019/09/Figure-2-Common-Collector-Amplifier-or-Emitter-Follower-Circuit-150x123.jpg 150w\" sizes=\"(max-width: 623px) 100vw, 623px\" />\u003Cp id=\"caption-attachment-4686\" class=\"wp-caption-text\">\u003C/span> \u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Figure 2 Common Collector Amplifier or Emitter Follower Circuit\u003C/span>\u003C/p>\u003C/div>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\"> \u003Ca href=\"https://www.elprocus.com/common-collector-amplifier-circuit-working/\">https://www.elprocus.com/common-collector-amplifier-circuit-working/\u003C/a>\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The input signal is introduced via the base of the triode whereas the output is taken from the emitter terminal. The main advantages of CC amplifier include high current gain, high input resistance, and low output resistance. The disadvantages of CC amplifier include low voltage gain. The CC amplifiers find their applications as impedance matching amplifiers, isolation amplifiers, and buffer amplifiers in cascade or multi-stage amplifier systems. [\u003Ca href=\"#Dav19\">3\u003C/a>]\u003C/span>\u003C/p>\r\n\u003Ch1>\u003Cspan class=\"ez-toc-section\" id=\"Common_Base_Amplifier\">\u003C/span>\u003Cspan style=\"font-size: 14pt; font-family: 'Trebuchet MS', Geneva;\">Common Base Amplifier\u003C/span>\u003Cspan class=\"ez-toc-section-end\">\u003C/span>\u003C/h1>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The common base amplifier configuration is not as widely used as the CE and CC amplifiers. They are mostly used in high frequency circuits. In a common base amplifier the base terminal of the triode is connected to the ground, the input signal is applied to the emitter, and the output is taken from the collector terminal. The circuit diagram of the CB amplifier is given as following:\u003C/span>\u003C/p>\r\n\u003Cdiv id=\"attachment_4687\" style=\"width: 688px\" class=\"wp-caption alignnone\">\u003Cimg loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" loading=\"lazy\" aria-describedby=\"caption-attachment-4687\" decoding=\"async\" class=\" wp-image-4687\" src=\"uploads/2019/09/Figure-3-Common-Base-Amplifier-using-an-NPN-Transistor.png\" alt=\"\" width=\"678\" height=\"835\" srcset=\"uploads/2019/09/Figure-3-Common-Base-Amplifier-using-an-NPN-Transistor.png 194w, uploads/2019/09/Figure-3-Common-Base-Amplifier-using-an-NPN-Transistor-150x185.png 150w\" sizes=\"(max-width: 678px) 100vw, 678px\" />\u003Cp id=\"caption-attachment-4687\" class=\"wp-caption-text\">\u003C/span> \u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Figure 3 Common Base Amplifier using an NPN Transistor\u003C/span>\u003C/p>\u003C/div>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">\u003Ca href=\"https://www.electronics-tutorials.ws/amplifier/common-base-amplifier.html\">https://www.electronics-tutorials.ws/amplifier/common-base-amplifier.html\u003C/a>\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The CB amplifiers are used in high frequency circuits where low input impedance is required. They are used in applications such as moving coil microphone pre-amplifiers, UHF, VHF, and RF amplifiers. The advantages of CB amplifier include decent voltage gain and current buffering capability. The disadvantages include need for dual power supply, low input impedance, low current gain, and high output impedance. [\u003Ca href=\"#www19\">4\u003C/a>]\u003C/span>\u003C/p>\r\n\u003Ch1>\u003Cspan class=\"ez-toc-section\" id=\"Works_Cited\">\u003C/span>\u003Cspan style=\"font-size: 14pt; font-family: 'Trebuchet MS', Geneva;\">Works Cited\u003C/span>\u003Cspan class=\"ez-toc-section-end\">\u003C/span>\u003C/h1>\r\n\u003Ctable width=\"630\">\r\n\u003Ctbody>\r\n\u003Ctr>\r\n\u003Ctd width=\"18\">\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">[1]\u003C/span>\u003C/td>\r\n\u003Ctd width=\"606\">\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Lee Forest. (2019, August) www.allaboutcircuits.com. [Online]. \u003Ca href=\"https://www.allaboutcircuits.com/textbook/semiconductors/chpt-13/the-triode/\">https://www.allaboutcircuits.com/textbook/semiconductors/chpt-13/the-triode/\u003C/a>\u003C/span>\u003C/td>\r\n\u003C/tr>\r\n\u003Ctr>\r\n\u003Ctd width=\"18\">\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">[2]\u003C/span>\u003C/td>\r\n\u003Ctd width=\"606\">\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Tarun Agarwal. (2019, June) www.elprocus.com. [Online]. \u003Ca href=\"https://www.elprocus.com/common-emitter-amplifier-circuit-working/\">https://www.elprocus.com/common-emitter-amplifier-circuit-working/\u003C/a>\u003C/span>\u003C/td>\r\n\u003C/tr>\r\n\u003Ctr>\r\n\u003Ctd width=\"18\">\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">[3]\u003C/span>\u003C/td>\r\n\u003Ctd width=\"606\">\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Dave Moldenhauer. (2019, March) www.watelectrical.com. [Online]. \u003Ca href=\"https://www.watelectrical.com/working-and-applications-of-common-collector-amplifier/\">https://www.watelectrical.com/working-and-applications-of-common-collector-amplifier/\u003C/a>\u003C/span>\u003C/td>\r\n\u003C/tr>\r\n\u003Ctr>\r\n\u003Ctd width=\"18\">\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">[4]\u003C/span>\u003C/td>\r\n\u003Ctd width=\"606\">\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">(2019, August) www.electronics-notes.com. [Online]. \u003Ca href=\"https://www.electronics-notes.com/articles/analogue_circuits/transistor/transistor-common-base-circuit.php\">https://www.electronics-notes.com/articles/analogue_circuits/transistor/transistor-common-base-circuit.php\u003C/a>\u003C/span>\u003C/td>\r\n\u003C/tr>\r\n\u003C/tbody>\r\n\u003C/table>\r\n\u003C/div>\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">\u003C/div>\r\n\t\t\t\t\t\t\r\n\t\t\t\t\t\t\t\t\t\t\t\t\t\r\n\t\t\t\t\t\t\u003C!-- clear for photos floats -->\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">","uploads/2019/09/Figure-1-Common-Emitter-Amplifier-Circuit.jpg",56,"2026-04-22 01:43:51","judgment-method-of-three-types-of-amplifiers",{"id":70,"title":71,"summary":72,"content":73,"cover":74,"cateId":12,"tags":28,"views":75,"isTop":13,"status":19,"createBy":28,"createTime":67,"updateBy":28,"updateTime":31,"institutionId":28,"isPage":13,"images":28,"horizontalCover":28,"verticalCover":28,"slug":76,"siteId":15},"4e90914c43b2a6a4366","Precautions for using MOS (Metal-Oxide-Silicon transistor) tubes","Precautions for using MOS (Metal-Oxide-Silicon transistor) tubes Looking for capacitors online purchase? is a reliable marketplace to buy and learn about capacitors. Come with us for amazing deals &amp; information.","\u003Cdiv id=\"attachment_4675\" style=\"width: 388px\" class=\"wp-caption alignnone\">\u003Cimg fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" fetchpriority=\"high\" aria-describedby=\"caption-attachment-4675\" fetchpriority=\"high\" decoding=\"async\" class=\" wp-image-4675\" src=\"uploads/2019/09/MOS-tube.jpg\" alt=\"\" width=\"378\" height=\"378\" srcset=\"uploads/2019/09/MOS-tube.jpg 225w, uploads/2019/09/MOS-tube-150x150.jpg 150w, uploads/2019/09/MOS-tube-24x24.jpg 24w, uploads/2019/09/MOS-tube-48x48.jpg 48w, uploads/2019/09/MOS-tube-96x96.jpg 96w\" sizes=\"(max-width: 378px) 100vw, 378px\" />\u003Cp id=\"caption-attachment-4675\" class=\"wp-caption-text\">\u003C/span> \u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">MOS tube\u003C/span>\u003C/p>\u003C/div>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">A MOS transistor (also known as metal-oxide semiconductor field effect transistor) is electrically conductive by a majority of carriers’ and it is a voltage controlled electrical device. It is also called a unipolar transistor. It has three main terminals; Gate (G), Drain (D) and Source (S). The Gate voltage determines the conductivity of the device and with change of applied voltage; the MOS transistor can be used for amplifying or switching electronic signals. Its characteristics are; high input resistance (10^7~10^12Ω), low noise, low power consumption, large dynamic range, easy integration, no secondary breakdown, wide safe working area, source and drain can be interchanged, it is voltage controlled device and conduction takes place through majority carriers (n-channel: electrons and p-channel: holes).\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">All MOS integrated circuits (including P-channel MOS, N-channel MOS, complementary MOS-CMOS integrated circuits) have an insulated gate to prevent voltage breakdown. Generally, the thickness of insulating Gate oxide layer of MOS transistor is 5 &#8211; 200 nm (about 25 nm, 50 nm, and 80 nm). In addition to the high-impedance gate of the integrated circuit, there is a resistor-diode network for protection. However, MOS devices are sensitive to voltage spikes and static electricity discharges and this can cause difficulties when we have to replace MOS devices especially complementary-symmetry metal-oxide semiconductor (CMOS) devices. Therefore, the protection network inside the device is not enough to avoid electrostatic damage (ESD) to the device. To minimize chances of damaging MOS devices during handling, special procedures have been developed to protect them from static shock. ICs are generally shipped and stored in special conductive-plastic tubes or trays. MOS devices safety is ensured by inserting ICs leas into aluminium foil or antistatic (conductive) foam – not Styrofoam. PC boards containing static sensitive devices are normally shipped in special antistatic bags, which are good for storing ICs and other computer components that could be damaged by ESD.\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Experiments indicate that MOS device will fail during high-voltage discharge. The device may also fail for accumulation of multiple lower voltage discharges. According to the severity of the damage, there are many forms of electrostatic damage. The most serious and most likely to occur is the complete destruction of the input or output so as to be short-circuited or open to the power supply terminal VDD, and MOS device completely loses its original function. A little bit of serious damage is intermittent failure or degradation of performance, which is even more difficult to detect. There is also some electrostatic damage that can cause the device performance to deteriorate due to increased leakage current.\u003C/span>\u003C/p>\r\n\u003Ch1>\u003Cspan style=\"font-size: 14pt; font-family: 'Trebuchet MS', Geneva;\">\u003Cstrong>MOS tube definition\u003C/strong>\u003C/span>\u003C/h1>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">MOS tube is a MOS transistor or a metal-insulator-semiconductor. The source (S) and drain (D) of MOS tube can be reversed. They are all N-type regions formed in the P-type backgate. And in most cases, the two zones are same even if two ends are reversed. And it will not affect performance of the device. Such devices are considered to be symmetrical. MOS tube is a voltage-driven high-current type device, which is widely used in circuits, especially power systems. MOS tubes have some characteristics that should be paid special attention in practical applications.\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">MOS devices have body diodes formed by pn junction between source (S) and drain (D), and also known as parasitic diodes or an internal diode, are found in a single MOS device between the drain and the source. They are not used in integrated circuit lithography (standard method of printed circuit board (PCB), and microprocessor fabrication). This diode can provide reverse protection and freewheeling during high current drive and inductive loads. The forward voltage drop is about 0.7~1V. Because of this diode, the MOS device can&#8217;t simply see the function of a switch in the circuit. For example, in the charging circuit, after the charging is completed, the battery will reverse when the supply power is removed; this is usually the result we do not want to see. The general solution is to add a diode to prevent reverse power supply. This can be done, but the characteristics of the diode must have a forward voltage of 0.6~1V. Down, in the case of high currents, the heat is severe, and at the same time, the energy is wasted, and the energy efficiency of the whole machine is low. Another method is to add a back-to-back MOS tube and use the low on-resistance of the MOS tube to achieve energy saving. Another common application of this characteristic is low-voltage synchronous rectification. In practice, the body diode is a result of manufacturing process, and it is in between the source and drain and on an n-channel device, if the drains fall below voltage on the source, current will flow from source to drain.\u003C/span>\u003C/p>\r\n\u003Ch1>\u003Cspan style=\"font-size: 14pt; font-family: 'Trebuchet MS', Geneva;\">\u003Cstrong>Precautions\u003C/strong>\u003C/span>\u003C/h1>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">After the MOS tube is turned on, it has no directionality and in this state of operation, it behaves like a wire. It has a resistance characteristic only and there is no conduction voltage drop in this case. Usually, the saturation level on resistance is several to several tens of milliohms (mΩ). MOS tube is also non-directional therefore allowing both DC and AC currents to pass through.\u003C/span>\u003C/p>\r\n\u003Ch1>\u003Cspan style=\"font-size: 14pt; font-family: 'Trebuchet MS', Geneva;\">\u003Cstrong>Precautions for using MOS tubes\u003C/strong>\u003C/span>\u003C/h1>\r\n\u003Cul>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">In order to safely use the MOS tube, the limit value of the dissipated power of the tube, the maximum drain-source voltage, the maximum gate-source voltage, and the maximum current set values cannot be exceeded in the manufacturing design.\u003C/span>\u003C/li>\r\n\u003C/ul>\r\n\u003Cul>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">When using various types of MOS tubes, they must be connected to the circuit in strict accordance with the required bias, and the polarity of the MOS tube bias should be observed. For example, the junction between the source and drain of the junction MOS transistor is a PN junction, the gate of the N-channel transistor can be positively biased; the gate of the P-channel transistor can be negatively biased.\u003C/span>\u003C/li>\r\n\u003C/ul>\r\n\u003Cul>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">Since the input impedance of the MOS tube is extremely high, the lead pin must be short-circuited during transportation and storage, and the metal shield package should be used to prevent the external induced potential from penetrating the gate. In particular, it is important to note that the MOS tube cannot be placed in a plastic box. It should be placed in a metal box e.g aluminium foil when it is stored, and the tube should be protected from moisture.\u003C/span>\u003C/li>\r\n\u003C/ul>\r\n\u003Cul>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">In order to prevent the gate breakdown of the MOS tube, all test instruments, worktables, soldering irons, and the circuit itself must be well grounded; when the pins are soldered, the source is soldered first; before being connected to the circuit, All the lead ends of MOS tube are kept short-circuited with each other, and the short-circuit material is removed after soldering; when removing MOS tube from the component holder, the grounding of the human body should be adhered to. The advanced gas-fired electric soldering iron is convenient for soldering MOS tubes and ensures safety. When the power is not turned off, it is absolutely impossible to insert or remove the tubes from the circuit. The above safety measures must be taken care of when using MOS tubes.\u003C/span>\u003C/li>\r\n\u003C/ul>\r\n\u003Cul>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">When installing the MOS tube, pay attention to the location of the installation to avoid heating elements; to prevent the vibration of MOS tube, it is necessary to fasten MOS tube; when the lead is bent, it should be larger than the root size of 5 mm. Therefore it is important to prevent bending of the pins and causing air leaks.\u003C/span>\u003C/li>\r\n\u003C/ul>\r\n\u003Cul>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">When using a VMOS tube, a suitable heat sink must be added. Taking VNF306 as an example, the maximum power can reach 30W after it is equipped with a 140×140×4 (mm) heat sink.\u003C/span>\u003C/li>\r\n\u003C/ul>\r\n\u003Cul>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">After the multiple MOS tubes are connected in parallel, the high-frequency characteristics of the amplifier are deteriorated due to the corresponding increase in the inter-electrode capacitance and the distributed capacitance and high-frequency parasitic oscillation of the amplifier is easily caused by the feedback. For this reason, the parallel composite MOS tubes generally do not exceed four, and the anti-parasitic oscillation resistors are connected in series to the base or the gate of each tube.\u003C/span>\u003C/li>\r\n\u003C/ul>\r\n\u003Cul>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">The gate-source voltage of the junction MOS transistor cannot be reversed and can be saved in the open state. When the insulated gate MOS transistor is not used, the electrodes must be short-circuited since its input resistance is very high, so as to avoid an external electric field. The MOS tube is damaged by such action.\u003C/span>\u003C/li>\r\n\u003C/ul>\r\n\u003Cul>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">When soldering, the soldering iron shell must be equipped with an external grounding wire to prevent damage to MOS tube due to electrification of the soldering iron. For a small amount of soldering, you can also solder the soldering iron after removing the plug or cutting off the power. Especially when soldering insulated gate MOS transistors, they should be soldered in the order of source-drain-gate, and the power should be cut off.\u003C/span>\u003C/li>\r\n\u003C/ul>\r\n\u003Cul>\r\n\u003Cli>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">When soldering with 25W soldering iron, it should be fast. If soldering with 45~75W soldering iron, use the tweezers to clamp the root of the pin to help dissipate heat. The junction MOS tube can qualitatively check the quality of the MOS tube by using the table resistance file (check the resistance between the forward and reverse resistance of each PN junction and the drain source), and the insulated gate field effect tube cannot be inspected with a multimeter, and the tester must be used. Moreover, the short-circuit line of each electrode can be removed after the tester is connected. When it is removed, it should be short-circuited and then removed. The key is to avoid the gate hanging.\u003C/span>\u003C/li>\r\n\u003C/ul>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">When input impedance is a factor to consider during design process, it is necessary to take moisture-proof measures to avoid lowering the input resistance of the MOS tube due to temperature influence. If a four-lead MOS transistor is used, its substrate leads should be grounded. The ceramic packaged of the MOS tube has photosensitive properties and should be protected from light.\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">For power MOS tubes, there must be good heat dissipation conditions. Because the power MOS tube is used under high load conditions, it is necessary to design a sufficient heat sink to ensure that the temperature of MOS tube casing does not exceed the rated value, so that the MOS device can work stably and reliably for a long time.\u003C/span>\u003C/p>\r\n\u003Cp>\u003Cspan style=\"font-family: 'Trebuchet MS', Geneva;\">In short, to ensure use of MOS tubes safely, there are many precautions to be adhered to, and the safety measures adopted are various. The vast number of professional and technical personnel required, especially the vast number of electronic enthusiasts, must proceed according to their actual conditions. Take practical measures to use MOS tubes safely and effectively.\u003C/span>\u003C/p>\r\n\u003C/div>\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">\u003C/div>\r\n\t\t\t\t\t\t\r\n\t\t\t\t\t\t\t\t\t\t\t\t\t\r\n\t\t\t\t\t\t\u003C!-- clear for photos floats -->\r\n\t\t\t\t\t\t\u003Cdiv class=\"clear\">","uploads/2019/09/MOS-tube.jpg",146,"precautions-for-using-mos-metal-oxide-silicon-transistor-tubes",1776841270601]