MA4AGSW2: Performance in Advanced RF Systems
1. Device Introduction
The MA4AGSW2 is an RF switch device developed by MACOM, based on PIN diode technology. Designed for broadband RF switching applications, it operates across a frequency range from 50 MHz to 50 GHz and features a Single-Pole Double-Throw (SPDT) reflective configuration. It is ideal for signal routing, switching, and control in advanced RF systems, including communication infrastructure, radar, and test instrumentation that demand fast switching speeds and high isolation.
2. Key Technical Parameters
Parameter | Specification |
Device Type | PIN Diode |
Frequency Range | DC to 18 GHz |
Forward Bias Current | 10–50 mA (depending on system design) |
Reverse Breakdown Voltage | ≥ 200 V (typical) |
Insertion Loss (@10 GHz) | < 0.4 dB |
Isolation (@10 GHz) | > 20 dB |
Switching Time (Rise/Fall) | < 5 ns |
Package Type | Die |
Operating Temperature | -65°C to +150°C (junction temperature) |
RoHS Compliance | Yes |
3. Functional Features and Design Advantages
- Wide Frequency Coverage for High-Frequency Applications
Supports operation from 50 MHz up to 50 GHz, making it suitable for millimeter-wave and microwave systems used in precision instruments, high-frequency front ends, and signal routing architectures.
- Low Insertion Loss with High Isolation
Typical insertion loss is as low as 0.3 dB, with isolation up to 33 dB, preserving signal integrity and minimizing crosstalk—critical in sensitive receiver and phased-array systems.
- Bare Die Format for High-Density Integration
The Die Form packaging allows for integration into System-in-Package (SiP) and Multi-Chip Module (MCM) designs, reducing the overall system footprint and enabling flexible custom layouts.
4. Typical Application Areas
Application Field | Functional Role |
Broadband Communication Front Ends | Multi-band RF path selection, mmWave/microwave switching |
Phased Array Radar Systems | T/R path control, dynamic beamforming and signal routing |
High-Speed RF Test Platforms | Signal switching, frequency band routing, signal isolation |
Industrial & Medical Equipment | Power modulation, microwave signal gating and control |
5. Product Comparison within the MA4 Series
Model | Frequency Range | Insertion Loss (typ.) | Isolation (typ.) | Switch Type | Package | Application Focus |
MA4AGSW2 | 50 MHz – 50 GHz | 0.3 dB | 33 dB | SPDT / Reflective | Die | mmWave switching, high-speed path control |
MA4AGSW1 | 50 MHz – 20 GHz | 0.4 dB | 28 dB | SPDT / Reflective | SC-70 | Mid-band communications, power switching |
MA4AGBLP912 | DC – 26.5 GHz | 0.35 dB | 30 dB | SPDT / Reflective | Flip-Chip | Instrumentation, compact module integration |
MA4PBL027 | DC – 6 GHz | 0.5 dB | 25 dB | SPST / Absorptive | SMA | Low-frequency routing, power path isolation |
MA4E1317 | 5 MHz – 3 GHz | 0.6 dB | 16 dB | SPST / Reflective | Ceramic | Industrial radios, broadcast systems |
Note: Performance parameters are typical values under standard test conditions. Actual performance may vary depending on system impedance, biasing network, and PCB design. Always validate with real-world prototypes.
6. Packaging & CAD Resource Support
The MA4AGSW2 is delivered in bare die format, suitable for advanced integration environments. CAD models compatible with Altium, Cadence, and Mentor design tools are available for download via , facilitating easy integration into your PCB layout and BOM workflows.
7. Summary
The MA4AGSW2 is a high-isolation, low-loss, fast-switching RF PIN diode optimized for reflective SPDT switch implementations. Its excellent high-frequency performance and bare-die form factor make it ideal for millimeter-wave routing, radar T/R modules, RF front-end switching, and microwave test platforms.
To explore more component specifications, packaging models, and inventory availability, please visit the official website.
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