STW20NK50Z - N-channel SuperMESH™ Power MOSFET

STW20NK50Z

TO-247 Package

Symbol

  1. GATE  2. DRAIN 3. SOURCE

WHAT IS STW20NK50Z?

This STW20NK50Z device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology. In addition to a significant reduction in on state resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Low on state resistance makes it suitable for power electronics converters utilized in power conversion & control. High dv/dt capability makes it superior in high voltage applications like photovoltaic power generations and VFDs.

PIN CONFIGURATION

Table 1

PIN NUMBER PIN NAME DESCRIPTION
1 Gate Controls the biasing of the MOSFET
2 Drain Current flows in through Drain
3 Source Current flows out through Source

FEATURES

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitance

ALTERNATIVES FOR STW20NK50Z

Table 2

TRANSISTOR TYPE    ON_MAX    
STW20NK50Z 500 V 0.27 Ω 20 A 190 W
STW32N55M5 550 V 0.1 Ω 29 A 190 W
STW32NM50N 500 V 0.13 Ω 22 A 190 W
STW33N60M2 600 V 0.125 Ω 26 A 190 W
STW34NM60N 600 V 0.105 Ω 31.5 A 250 W

APPLICATION

  • High Current, High Speed Switching
  • Ideal for Off-Line Power Supplies, Adaptors And PFC

WHERE TO USE STW20NK50Z? | WORKING OF STW20NK50Z

Major load of industrial sectors are VFDs. Efficiency of VFDs depends on the converters used to drive the motors. Low on state resistance of STW20NK50Z reduce conduction losses and makes VFDs efficient. So low on state resistance along with high dv/dt in STW20NK50Z makes it perfect choice for VFDs.

PACKAGE MECHANICAL DATA

Table 3

Dim. mm
Min. Typ. Max.
A 4.85   5.15
A1 2.20   2.60
b 1.0   1.40
b1 2.0   2.40
b2 3.0   3.40
c 0.40   0.80
D 19.85   20.15
E 15.45   15.75
e   5.45  
L 14.20   14.80
L1 3.70   4.30
L2   18.50  
P 3.55   3.65
R 4.50   5.50
S   5.50  

 

Dimentional View

HOW TO USE STW20NK50Z

STW20NK50Z MOSFET can be use in any power electronics circuit like inverter, DC-DC converter or controlled rectifier.  As mentioned previously STW20NK50Z has three terminals Gate(G), Drain(D) and Source(S). Drain and Source are called power terminals whereas Gate terminal is known as control terminal. As shown in fig. gate pulses need to be provided between Gate and Source to turn on the MOSFET. Maximum current carrying capacity of STW20NK50Z is 20A hence, one can utilize this MOSFET in an application which require current flow of lesser than 20A.

Use of STW20NK50Z

To use STW20NK50Z in DC/DC Converters or Multilevel Inverters, driver ICs like TLP250 or IR2101 are required. Circuit diagram of STW20NK50Z along with driver TLP250 is shown in Fig.6. MOSFET Drivers are used to fulfill two objectives 1) to provide isolation (to control circuit from power circuit). 2) to amplification (5V pulse/3.3 V pulse from controller amplifies to >10V to effectively drive MOSFET).  As shown in fig.6 TLP250 has inbuilt optocoupler along with two transistor amplification circuit. Pin configuration and appropriate connections are summarized in Table.4.

STW20NK50Z along with TLP250

Table 4 Connection of TLP250 with STW20NK50Z

Pin Number Pin Name Connection Description
2 Anode To the output pin of controller Input pulse of 3.3 V/5V to the driver circuit
3 Cathode To the ground of controller Ground of input side circuit
8   To the isolated supply with output voltage >10 V Supply for driver circuit
5 GND To the GND of isolated supply Ground of external driver supply
6,7 OUTPUT To the Gate of STW20NK50Z. (Resistor is connected to limit the gate current) 6 and 7 pins are internally shorted and provide amplified pulse provided at pin 2.

STW20NK50Z RELATED PRODUCTS PRICE

PartsMfr.DescriptionStockPricesBuy Now
STW20NK50ZSTMOSFET N-CH 500V 17A TO-2473900$0.869 Lowest
STW20N95K5STMOSFET N-CH 950V 17.5A TO-247120$3.982 Lowest
STW20NM60STMOSFET N-CH 600V 20A TO-24769$1.322 Lowest

STW20NK50Z DATASHEET PDF

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