Core parameters
Parameter | Numerical |
Device Type | N-channel MOSFET + gate driver integrated |
Drain-source voltage (VDS) | 100V |
Continuous drain current (ID) | 8.2A (@25°C, T<sub>C</sub> condition) |
Maximum on-resistance R<sub>DS(ON)</sub> | 150mΩ (typical, VGS=10V) |
Driving voltage range | 5V ~ 12V |
Peak drive current | ±1A |
Switching speed | Nanosecond fast switching |
Power consumption (PD) | 2.5W (@25°C) |
Package | SOT-223 |
Operating temperature range | –55°C to +150°C |
Environmental standards | RoHS, Pb-Free, Halogen-Free |
Features
Integrated MOSFET + driver
Low on-resistance
High-voltage working capacity
Fast switching performance
Compact package
High reliability
Typical application scenarios
Performance Comparison
Performance indicators | NGD8201ANT4G | Traditional discrete MOSFET + driver |
Integration | MOSFET+driver integration | Discrete, requires additional driver |
Drive current | ±1A | Depends on the driver chip |
On-resistance R<sub>DS(ON)</sub> | 150mΩ | Common MOSFETs are usually >200mΩ |
Encapsulation | SOT-223 compact | Driver + MOSFET takes up more space |
Cost and design complexity | Low, simple design | High, complex peripheral components |
By integrating MOSFET with driver, the NGD8201ANT4G significantly improves switching efficiency and design simplicity, making it ideal for modern miniaturized systems.
Manufacturer Profile: onsemi
Onsemi is a leading global supplier of power semiconductors and intelligent control devices, with products covering power management, MOSFETs, IGBTs, analog ICs, and other fields. The NGD8201ANT4G is one of Onsemi’s representative integrated MOSFET series products, widely used in industrial, automotive, and consumer electronic devices.
Why choose NGD8201ANT4G?
● MOSFET and driver integration reduces external components and simplifies design
● Supports high voltage (100V) and high current (8.2A) , suitable for industrial/automotive applications
● Fast switching capability , suitable for high-frequency applications and DC-DC converters
● Low on-resistance (150mΩ) to improve efficiency
● SOT-223 package , small size and good heat dissipation
Frequently Asked Questions (FAQ)
Q1: Can the NGD8201ANT4G be directly controlled by an MCU?
Yes, the NGD8201ANT4G is an intelligent power switch device with an integrated MOSFET driver. Its logic inputs are compatible with TTL/CMOS levels, with a typical drive voltage of 5V. This makes it fully compatible with the GPIO outputs of most MCUs, eliminating the need for additional gate drive circuitry. This significantly simplifies peripheral design and makes it suitable for low-power control systems, MCU-driven power switches, and load management applications.
Q2: Is it suitable for high-frequency switching circuits?
Yes, this device integrates an optimized drive circuit to reduce gate charge and discharge delays during MOSFET switching, enabling fast turn-on and turn-off. Its switching speeds can meet application requirements at hundreds of kHz, making it commonly used in high-frequency DC-DC converters, motor drives, and power management circuits. In practical applications, it’s necessary to consider load characteristics and heat dissipation design to ensure stable efficiency and thermal performance at high frequencies.
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